- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370740 > HY5PS12823LF 64Mx8|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M PDF資料下載
參數(shù)資料
| 型號(hào)： | HY5PS12823LF |
| 英文描述： | 64Mx8|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M |
| 中文描述： | 64Mx8 | 1.8 | 8K的| D43/D44/D54/D55 |的DDR II內(nèi)存- 512M |
| 文件頁(yè)數(shù)： | 48/66頁(yè) |
| 文件大?。?/td> | 862K |
| 代理商： | HY5PS12823LF |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)當(dāng)前第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)
Rev. 0.52/Nov. 02 48
HY5PS12423(L)F
HY5PS12823(L)F
HY5PS121623(L)F
Precharge Opeation
The precharge command is used to close or deactivate the open row in particular bank or the open row in all banks.
Precharge command is issued by activating CS, RAS, WE and deactivating CAS at the rising edge of clock. Bank
address and A10 provided on inputs BA0~BA1, A10 selects the bank to be precharged. Input A10 determines whether
one or all banks precharge. All bank precharged command is issued with A10=high, at that case, the other bank
address inputs are don’t care. But Bank address inputs select bank to be precharged, when precharge command is
issued with A10 = low. Once a bank has been precharged, it is in the idle state and must be activated prior to any read
or write commands being issued to that bank. The bank will be available for a subsequent row access some specified
time (tRP) after the precharge command is issued. Burst termination by precharge command is prohibited.
Bank Selection for Precharge
A10
BA0
BA1
Precharged Bank
Low
Low
Low
Bank 0 only
Low
Low
High
Bank 1 only
Low
High
Low
Bank 2 only
Low
High
High
Bank 3 only
High
Don’t care
Don’t care
All Banks 0~3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5P | Current Transducers HY 5 to 25-P/SP1 |
| HY5R256HC | -|2.5V|8K|40|Direct RDRAM - 256M |
| HY5R288HC | -|2.5V|8K|40|Direct RDRAM - 288M |
| HY5V16CF | 1Mx16|3.3V|4K|H|SDR SDRAM - 16M |
| HY5V16CF-H | x16 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5PS1G1631AFP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G1631AFP-Y5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G1631ALFP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G1631ALFP-Y5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G1631CFP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。