參數(shù)資料
型號(hào)： HYB18L256160B
廠商： QIMONDA
英文描述： DRAMs for Mobile Applications 256-Mbit Mobile-RAM
中文描述： DRAM的針對(duì)移動(dòng)應(yīng)用256兆移動(dòng)RAM
文件頁(yè)數(shù)： 30/58頁(yè)
文件大?。?/td> 1766K
代理商： HYB18L256160B
Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
30
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
FIGURE 26
WRITE Burst (CAS Latency = 3)
Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either case, a
continuous flow of input data can be maintained. A WRITE command can be issued on any positive edge of clock following the
previous WRITE command. The first data element from the new burst is applied after either the last element of a completed
burst (
Figure 27
) or the last desired data element of a longer burst which is being truncated (
Figure 28
). The new WRITE
command should be issued x cycles after the first WRITE command, where x equals the number of desired data elements.
FIGURE 27
Consecutive WRITE Bursts
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LQ WKH FDVH VKRZQ
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W
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W
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W
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W
53
W
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123
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123
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123
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123
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$& 7
123
123
123
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%D $
&RO Q
%D $
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3UH $ O
$3
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', Q
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%D $ &RO Q E %DQN $ &ROXPQ Q E
', Q E 'DWD ,Q WR FROXPQ Q E
%XUVW /H QJWK
LQ WKH FDVH VKRZQ
VXEVHTXHQW HOHPHQWV RI 'DWD ,Q DUH SURYLGHG LQ WKH SURJUDPPHG RUGHU IROORZLQJ ', Q E
&RPPDQG
123
123
123
123
123
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123
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:5,7(
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&RO Q
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參數(shù)描述
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HYB18L256160BCX-7.5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM
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