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| 型號： | HYB18L256160B |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| 中文描述： | DRAM的針對移動應(yīng)用256兆移動RAM |
| 文件頁數(shù)： | 46/58頁 |
| 文件大?。?/td> | 1766K |
| 代理商： | HYB18L256160B |
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Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
46
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
TABLE 20
Current State Bank n - Command to Bank m (different bank)
Current State
CS
RAS
CAS
WE
Command / Action
Note
Any
H
L
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
X
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
X
H
X
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
X
H
X
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
DESELECT (NOP / continue previous operation)
NO OPERATION (NOP / continue previous operation)
Any command otherwise allowed to bank n
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
1)2)3)4)5)6)
1) This table applies when CKEn-1 was HIGH and CKEn is HIGH and after
t
RC
has been met (if the previous state was Self Refresh).
2) This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands shown are those
allowed to be issued to bank m (assuming that bank m is in such a state that the given command is allowable). Exceptions are covered in
the notes below.
3) Current state definitions, see
Table 21
4) AUTO REFRESH, SELF REFRESH and MODE REGISTER SET commands may only be issued when all banks are idle.
5) A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only.
6) All states and sequences not shown are illegal or reserved.
7) READs or WRITEs listed in the Command/Action column include READs or WRITEs with Auto Precharge enabled and READs or WRITEs
with Auto Precharge disabled.
8) Requires appropriate DQM masking.
9) Concurrent Auto Precharge: bank n will start precharging when its burst has been interrupted by a READ or WRITE command to bank m.
1)
to
6)
Idle
Row Activating,
Active, or
Precharging
1)
to
6)
1)
to
6)
1)
to
7)
1)
to
7)
1)
to
6)
Read (Auto-
Precharge
Disabled)
1)
to
6)
1)
to
7)
1)
to
8)
1)
to
6)
Write (Auto-
Precharge
Disabled)
1)
to
6)
1)
to
7)
1)
to
7)
1)
to
6)
Read
(with Auto-
Precharge)
1)
to
6)
1)
to
7)
,
9)
1)
to
9)
1)
to
6)
Write
(with Auto-
Precharge)
1)
to
6)
1)
to
7)
,
9)
1)
to
7)
,
9)
1)
to
6)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BF | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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