參數資料
型號: HYB18L256160B
廠商: QIMONDA
英文描述: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
中文描述: DRAM的針對移動應用256兆移動RAM
文件頁數: 9/58頁
文件大?。?/td> 1766K
代理商: HYB18L256160B
Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
9
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2.2
Register Definition
2.2.1
Mode Register
The Mode Register is used to define the specific mode of operation of the Mobile-RAM. This definition includes the selection
of a burst length (bits A0-A2), a burst type (bit A3), a CAS latency (bits A4-A6), and a write burst mode (bit A9). The Mode
Register is programmed via the MODE REGISTER SET command (with BA0 = 0 and BA1 = 0) and will retain the stored
information until it is programmed again or the device loses power.
The Mode Register must be loaded when all banks are idle, and the controller must wait the specified time before initiating any
subsequent operation. Violating either of these requirements results in unspecified operation.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
TABLE 5
Mode Register Definition (BA[1:0] = 00
B
)
Field
Bits
Type
Description
WB
9
w
Write Burst Mode
0
B
Burst Write
1
B
Single Write
CAS Latency
010
B
2
011
B
3
Note: All other bit combinations are RESERVED.
Burst Type
0
B
Sequential
1
B
Interleaved
Burst Length
000
B
1
001
B
2
010
B
4
011
B
8
111
B
full page (Sequential burst type only)
Note: All other bit combinations are RESERVED.
CL
[6:4]
w
BT
3
w
BL
[2:0]
w
03%/
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%$
$
$
$
$
$
$
$
$
$
$
$
$
$
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:%
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相關代理商/技術參數
參數描述
HYB18L256160BC-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
HYB18L256160BC-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications
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HYB18L256160BCX-7.5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYB18L256160BF 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications