參數(shù)資料
型號: HYB18L256160B
廠商: QIMONDA
英文描述: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
中文描述: DRAM的針對移動(dòng)應(yīng)用256兆移動(dòng)RAM
文件頁數(shù): 8/58頁
文件大小: 1766K
代理商: HYB18L256160B
Data Sheet
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
8
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2.1
Power On and Initialization
The Mobile-RAM must be powered up and initialized in a predefined manner (see
Figure 3
). Operational procedures other than
those specified may result in undefined operation.
FIGURE 3
Power-Up Sequence and Mode Register Sets
1. At first, device core power (
V
DD
) and device IO power (
V
DDQ
) must be brought up simultaneously. Typically
V
DD
and
V
DDQ
are driven from a single power converter output.
Assert and hold CKE and DQM to a HIGH level.
2. After
V
DD
and
V
DDQ
are stable and CKE is HIGH, apply stable clocks.
3. Wait for 200
μ
s while issuing NOP or DESELECT commands.
4. Issue a PRECHARGE ALL command, followed by NOP or DESELECT commands for at least
t
RP
period.
5. Issue two AUTO REFRESH commands, each followed by NOP or DESELECT commands for at least
t
RFC
period.
6. Issue two MODE REGISTER SET commands for programming the Mode Register and Extended Mode Register, each
followed by NOP or DESELECT commands for at least
t
MRD
period; the order in which both registers are programmed is
not important. Programming of the Extended Mode Register may be omitted when default values (half drive strength, 4 bank
refresh) will be used.
Following these steps, the Mobile-RAM is ready for normal operation.
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