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參數(shù)資料
| 型號(hào)： | intel Pentium II processor |
| 廠商： | Intel Corp. |
| 英文描述： | Pentium II Processor Mobile Module(帶移動(dòng)模塊奔II處理器) |
| 中文描述： | 奔騰II處理器的移動(dòng)模塊（帶移動(dòng)模塊奔二處理器） |
| 文件頁數(shù)： | 33/46頁 |
| 文件大?。?/td> | 681K |
| 代理商： | INTEL PENTIUM II PROCESSOR |
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33
INTEL
PENTIUM
II PROCESSOR MOBILE MODULE MMC-1
Figure 8. Over-Current Protection Circuit
4.7.4.1.
In Figure 8, PWR is the voltage generated by applying the
AC Adaptor or Battery. M1 is a low RDS (on) P-Channel
MOSFET such as a Siliconix* SI4435DY. When the voltage
on PWR is applied and increased to over 4.75V, the
UNDER_VOLTAGE_LOCKOUT circuit allows R4 to pull up
Slew-Rate Control: Circuit Description
the gate of M3 to start a turn-on sequence. M3 pulls its drain
toward ground, forcing current to flow through R2. M1 will
not start to source any current until after t_delay with t_delay
defined as:
t_delay
R.
Vt
Vgs_max
Vpwr
Vgs_max
.
R16
R16 R2
Vpwr
The manufacturer’s Vgs_max specification of 20V must
never be exceeded. However, Vgs_max must be high
enough to keep the RDS (on) of the device as low as
possible. After the initial t_delay, M1 will begin to source
current and V_DC will start to ramp up. The ramp up time,
t_ramp, is defined as:
t_ramp
R.
Vsat
Vgs_max
t_delay
Maximum current during the voltage ramping is:
I
.
CtotalVpwr
t_ramp
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