參數(shù)資料
型號(hào)： IS43R16800A-6
廠商： Integrated Silicon Solution, Inc.
英文描述： 8Meg x 16 128-MBIT DDR SDRAM
中文描述： 8Meg × 16的128 - Mbit DDR SDRAM內(nèi)存
文件頁(yè)數(shù)： 26/47頁(yè)
文件大小： 473K
代理商： IS43R16800A-6
26
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev.
00
A
04/04/06
ISSI
IS43R16800A-6
Auto Precharge
Read with auto-precharge
The precharge is automatically performed after completing a read operation. The precharge starts tRPD (BL/2)
cycle after READA command input.
tRAP specification for READA allows a read command with auto precharge to be
issued to a bank that has been activated (opened) but has not yet satisfied the tRAS (min) specification. A column
command to the other active bank can be issued the next cycle after the last data output. Read with auto-precharge
command does not limit row commands execution for other bank. Refer to ‘Function truth table and related
note(Notes.*14).
out0
out1
out2
out3
CK
/CK
DQ
Command
tRP (min)
tRAP (min) = tRCD (min)
ACT
Note: Internal auto-precharge starts at the timing indicated by " ".
NOP
2 cycles (= BL/2)
READA
ACT
DQS
tAC,tDQSCK
tRPD
Read with auto-precharge
Write with auto-precharge
The precharge is automatically performed after completing a burst write operation. The precharge operation is
started (BL/ 2 + 3) cycles after WRITA command issued. A column command to the other banks can be issued the
next cycle after the internal precharge command issued. Write with auto-precharge command does not limit row
commands execution for other bank. Refer to the ‘Read with Auto-Precharge Enabled, Write with Auto-Precharge
Enabled’ section. Refer to ‘Function truth table and related note(Notes.*14)‘.
in1
in2
in3
in4
CK
/CK
DQ
Command
DM
tRAS (min)
tRCD (min)
tRP
DQS
ACT
WRITA
ACT
BL/2 + 3 cycles
Note: Internal auto-precharge starts at the timing indicated by " ".
BL = 4
NOP
NOP
Burst Write (BL = 4)
相關(guān)PDF資料
PDF描述
IS43R16800A-6T 8Meg x 16 128-MBIT DDR SDRAM
IS43R16800A-6TL 8Meg x 16 128-MBIT DDR SDRAM
IS43R16800A1 8Meg x 16 128-MBIT DDR SDRAM
IS43R16800A1-5TL 8Meg x 16 128-MBIT DDR SDRAM
IS43R32400A 4Meg x 32 128-MBIT DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS43R16800A-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:8Meg x 16 128-MBIT DDR SDRAM
IS43R16800A-6TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:8Meg x 16 128-MBIT DDR SDRAM
IS43R16800C-5TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 8Mx16 200MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16800C-5TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 8Mx16 200MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16800CC-5TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (8Mx16) 200MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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