參數(shù)資料
型號(hào)： IS43R16800A1
廠(chǎng)商： Integrated Silicon Solution, Inc.
英文描述： 8Meg x 16 128-MBIT DDR SDRAM
中文描述： 8Meg × 16的128 - Mbit DDR SDRAM內(nèi)存
文件頁(yè)數(shù)： 27/72頁(yè)
文件大?。?/td> 2174K
代理商： IS43R16800A1
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
04/17/06
27
ISSI
IS43R16800A1
Writes
Write bursts are initiated with a Write command, as shown in timing figure
Write Command
.
The starting column and bank addresses are provided with the Write command, and Auto Precharge is either enabled or dis-
abled for that access. If Auto Precharge is enabled, the row being accessed is precharged at the completion of the burst. For
the generic Write commands used in the following illustrations, Auto Precharge is disabled.
During Write bursts, the first valid data-in element is registered on the first rising edge of DQS following the write command, and
subsequent data elements are registered on successive edges of DQS. The Low state on DQS between the Write command
and the first rising edge is known as the write preamble; the Low state on DQS following the last data-in element is known as
the write postamble. The time between the Write command and the first corresponding rising edge of DQS (t
DQSS
) is specified
with a relatively wide range (from 75% to 125% of one clock cycle), so most of the Write diagrams that follow are drawn for the
two extreme cases (i.e. t
DQSS
(min) and t
DQSS
(max)). Timing figure
Write Burst (Burst Length = 4)
shows the two
extremes of t
DQSS
for a burst of four. Upon completion of a burst, assuming no other commands have been initiated, the DQs
and DQS enters High-Z and any additional input data is ignored.
Data for any Write burst may be concatenated with or truncated with a subsequent Write command. In either case, a continuous
flow of input data can be maintained. The new Write command can be issued on any positive edge of clock following the previ-
ous Write command. The first data element from the new burst is applied after either the last element of a completed burst or
the last desired data element of a longer burst which is being truncated. The new Write command should be issued x cycles
after the first Write command, where x equals the number of desired data element pairs (pairs are required by the 2n prefetch
architecture). Timing figure
Write to Write (Burst Length = 4)
shows concatenated bursts of 4. An example of non-
consecutive Writes is shown in timing figure
Write to Write: Max DQSS, Non-Consecutive (Burst Length = 4)
. Full-
speed random write accesses within a page or pages can be performed as shown in timing figure
Random Write Cycles (Burst
Length = 2, 4 or 8)
. Data for any Write burst may be followed by a subsequent Read command. To follow a Write
without truncating the write burst, t
WTR
(Write to Read) should be met as shown in timing figure
Write to Read: Non-Interrupting
(CAS Latency = 2; Burst Length = 4)
.
Data for any Write burst may be truncated by a subsequent (interrupting) Read command. This is illustrated in timing figures
“Write to Read: Interrupting (CAS Latency =2; Burst Length = 8)”, “Write to Read: Minimum D
QSS
, Odd Number of Data (3 bit
Write), Interrupting (CAS Latency = 2; Burst Length = 8)”, and “Write to Read: Nominal D
QSS
, Interrupting (CAS Latency = 2;
Burst Length = 8)”. Note that only the data-in pairs that are registered prior to the t
WTR
period are written to the internal array,
and any subsequent data-in must be masked with DM, as shown in the diagrams noted previously.
Data for any Write burst may be followed by a subsequent Precharge command. To follow a Write without truncating the write
burst, t
WR
should be met as shown in timing figure
Write to Precharge: Non-Interrupting (Burst Length = 4)
.
Data for any Write burst may be truncated by a subsequent Precharge command, as shown in timing figures
Write to Pre-
charge: Interrupting (Burst Length = 4 or 8)
to
Write to Precharge: Nominal DQSS (2 bit Write), Interrupting (Burst
Length = 4 or 8)
. Note that only the data-in pairs that are registered prior to the t
WR
period are written to the internal
array, and any subsequent data in should be masked with DM. Following the Precharge command, a subsequent command to
the same bank cannot be issued until t
RP
is met.
In the case of a Write burst being executed to completion, a Precharge command issued at the optimum time (as described
above) provides the same operation that would result from the same burst with Auto Precharge. The disadvantage of the Pre-
charge command is that it requires that the command and address busses be available at the appropriate time to issue the com-
mand. The advantage of the Precharge command is that it can be used to truncate bursts.
相關(guān)PDF資料
PDF描述
IS43R16800A1-5TL 8Meg x 16 128-MBIT DDR SDRAM
IS43R32400A 4Meg x 32 128-MBIT DDR SDRAM
IS43R32400A-5B 4Meg x 32 128-MBIT DDR SDRAM
IS43R32400A-5BL 4Meg x 32 128-MBIT DDR SDRAM
IS43R32400A-6B 4Meg x 32 128-MBIT DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS43R16800A1-5TL 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:8Meg x 16 128-MBIT DDR SDRAM
IS43R16800A-5T 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16800A-5TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16800A-5TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16800A-5T-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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