參數(shù)資料
型號(hào)： IS43R16800A1
廠商： Integrated Silicon Solution, Inc.
英文描述： 8Meg x 16 128-MBIT DDR SDRAM
中文描述： 8Meg × 16的128 - Mbit DDR SDRAM內(nèi)存
文件頁數(shù)： 49/72頁
文件大?。?/td> 2174K
代理商： IS43R16800A1
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
04/17/06
49
ISSI
IS43R16800A1
Capacitance
Parameter
Symbol
Min.
Max.
Units
Notes
Input Capacitance: CK, CK
CI
1
2.0
3.0
pF
1
Delta Input Capacitance: CK, CK
delta CI
1
0.25
pF
1
Input Capacitance: All other input-only pins (except DM)
CI
2
2.0
3.0
pF
1
Delta Input Capacitance: All other input-only pins (except DM)
delta CI
2
0.5
pF
1
Input/Output Capacitance: DQ, DQS, DM
C
IO
4.0
5.0
pF
1, 2
Delta Input/Output Capacitance: DQ, DQS, DM
delta C
IO
0.5
pF
1
1. V
DDQ
= V
DD
= 2.5V ±
0.2V (minimum range to maximum range), f = 100MHz, T
A
= 25
°
C, VO
DC
= V
DDQ/2
, VO
Peak -Peak
= 0.2V.
2. Although DM is an input-only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins. This is
required to match input propagation times of DQ, DQS and DM in the system.
DC Electrical Characteristics and Operating Conditions
(0°C
￡
T
A
￡
70
×
C; V
DDQ
= 2.5V
±
0.2V, V
DD
=
+
2.5V
±
0.2V, see AC Characteristics)
Symbol
Parameter
Min
Max
Units
Notes
V
DD
Supply Voltage
2.3
2.7
V
1
V
DDQ
I/O Supply Voltage
2.3
2.7
V
1
V
SS
, V
SSQ
Supply Voltage
I/O Supply Voltage
0
0
V
V
REF
I/O Reference Voltage
0.49 x V
DDQ
0.51 x V
DDQ
V
1, 2
V
TT
I/O Termination Voltage (System)
V
REF
0.04
V
REF
+
0.04
V
1, 3
V
IH(DC)
Input High (Logic1) Voltage
V
REF
+
0.15
V
DDQ
+
0.3
V
1
V
IL(DC)
Input Low (Logic0) Voltage
0.3
V
REF
0.15
V
1
V
IN(DC)
Input Voltage Level, CK and CK Inputs
0.3
V
DDQ
+
0.3
V
1
V
ID(DC)
Input Differential Voltage, CK and CK Inputs
0.30
V
DDQ
+
0.6
V
1, 4
V
IX(DC)
Input Crossing Point Voltage, CK and CK Inputs
0.30
V
DDQ
+
0.6
V
1, 4
VI
Ratio
V-I Matching Pullup Current to Pulldown Current Ratio
0.71
1.4
5
I
I
Input Leakage Current
Any input 0V
≤
V
IN
≤
V
DD
; (All other pins not under test
=
0V)
5
5
μ
A
1
I
OZ
Output Leakage Current
(DQs are disabled; 0V
≤
V
out
≤
V
DDQ
5
5
μ
A
1
I
OH
Output Current: Nominal Strength Driver
High current (V
OUT
= V
-0.373V, min V
, min V
TT
)
Low current (V
OUT
= 0.373V, max V
REF
, max V
TT
)
16.8
mA
1
I
OL
16.8
1. Inputs are not recognized as valid until V
REF
stabilizes.
2. V
REF
is expected to be equal to 0.5 V
DDQ
of the transmitting device, and to track variations in the DC level of the same. Peak-to-peak
noise on V
REF
may not exceed ± 2% of the DC value.
3. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to V
REF
, and
must track variations in the DC level of V
REF
.
4. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and
voltage range, for device drain to source voltages for 0.25 volts to 1.0 volts. For a given output, it represents the maximum difference
between pullup and pulldown drivers due to process variation.
相關(guān)PDF資料
PDF描述
IS43R16800A1-5TL 8Meg x 16 128-MBIT DDR SDRAM
IS43R32400A 4Meg x 32 128-MBIT DDR SDRAM
IS43R32400A-5B 4Meg x 32 128-MBIT DDR SDRAM
IS43R32400A-5BL 4Meg x 32 128-MBIT DDR SDRAM
IS43R32400A-6B 4Meg x 32 128-MBIT DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS43R16800A1-5TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:8Meg x 16 128-MBIT DDR SDRAM
IS43R16800A-5T 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16800A-5TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16800A-5TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16800A-5T-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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