參數(shù)資料
型號(hào)： IS43R16800A1
廠商： Integrated Silicon Solution, Inc.
英文描述： 8Meg x 16 128-MBIT DDR SDRAM
中文描述： 8Meg × 16的128 - Mbit DDR SDRAM內(nèi)存
文件頁(yè)數(shù)： 54/72頁(yè)
文件大小： 2174K
代理商： IS43R16800A1
54
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
04/17/06
ISSI
IS43R16800A1
AC Input Operating Conditions
(0 °C
≤
T
A
≤
70
°
C
;
V
DD
= V
DDQ
= 2.5V
±
0.2V (
-
6/
-
75); V
DD
= V
DDQ
= 2.6V
±
0.1V (
-
5/
-
43), See AC Characteristics)
Symbol
Parameter/Condition
Min
Max
Unit
Notes
V
IH(AC)
Input High (Logic 1) Voltage, DQ, DQS, and DM Signals
V
REF
+ 0.31
V
1, 2
V
IL(AC)
Input Low (Logic 0) Voltage, DQ, DQS, and DM Signals
V
REF
0.31
V
1, 2
V
ID(AC)
Input Differential Voltage, CK and CK Inputs
0.62
V
DDQ
+ 0.6
V
1, 2, 3
V
IX(AC)
Input Crossing Point Voltage, CK and CK Inputs
0.5*V
DDQ
0.2
0.5*V
DDQ
+
0.2
V
1, 2, 4
1. Input slew rate = 1V/ns
.
2. Inputs are not recognized as valid until V
REF
stabilizes.
3. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
4. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same.
I
DD
Specifications and Conditions
(0 °C
≤
T
A
≤
70
°
C
;
V
DD
= V
DDQ
= 2.5V
±
0.2V(
-
6/
-
75); V
DD
= V
DDQ
= 2.6V
±
0.1V (
-
5/
-
43), See AC Characteristics)
Symbol
Parameter/Condition
DDR266
(
-
75)
t
CK
=6ns
DDR333
(
-
6)
t
CK
=6ns
DDR400
(
-
5)
t
CK
=5.0ns
DDR466
(
-
43)
t
CK
=4.3ns
Unit
Notes
I
DD0
Operating Current
: one bank; active / precharge; t
= t
(min); DQ,
DM, and DQS inputs changing twice per clock cycle; address and control
inputs changing once per clock cycle
180
mA
1
I
DD1
Operating Current
: one bank; active / read / precharge; Burst = 2; t
=
t
RC
(min); CL = 2.5;
I
OUT
= 0mA; address and control inputs changing
once per clock cycle
210
mA
1
I
DD2P
Precharge Power Down Standby Current
: all banks idle; Power Down
mode; CKE
≤
V
IL
(max)
3.5
mA
1
I
DD2N
Idle Standby Current:
CS
≥
V
(min); all banks idle; CKE
≥
V
IH
(min);
address and control inputs changing once per clock cycle
65
mA
1
I
DD3P
Active Power Down Standby Current
: one bank active; Power Down
mode;
CKE
≤
V
IL
(max)
65
mA
1
I
DD3N
Active Standby Current
: one bank; active / precharge; CS
≥
V
(min);
CKE
≥
V
(min); t
= t
(max); DQ, DM, and DQS inputs changing
twice per clock cycle; address and control inputs changing once per
clock cycle
140
mA
1
I
DD4R
Operating Current:
one bank; Burst = 2; reads; continuous burst;
address and control inputs changing once per clock cycle; DQ and DQS
outputs changing twice per clock cycle; CL = 2.5; I
OUT
= 0mA
300
mA
1
I
DD4W
Operating Current
: one bank; Burst = 2; writes; continuous burst;
address and control inputs changing once per clock cycle; DQ and DQS
inputs changing twice per clock cycle; CL = 2.5
290
mA
1
I
DD5
Auto-Refresh Current
: t
RC
= t
RFC
(min)
240
mA
1
I
DD6
Self-Refresh Current
: CKE
≤
0.2V
4
mA
1, 2
I
DD7
Operating curren
t: four bank; four bank interleaving with BL = 4,
address
and control inputs randomly changing; 50% of data changing at
every transfer;
t
RC
= t
RC
(min); I
OUT
= 0mA.
430
mA
1
1. I
DD
specifications are tested after the device is properly initialized.
2. Enables on-chip refresh and address counters.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS43R16800A1-5TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:8Meg x 16 128-MBIT DDR SDRAM
IS43R16800A-5T 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16800A-5TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16800A-5TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16800A-5T-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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