參數(shù)資料
型號: IS75V16F128GS32-7065BI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: 存儲器
英文描述: 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA107
封裝: 9 X 10 MM, 0.80 MM PITCH, FBGA-107
文件頁數(shù): 19/52頁
文件大小: 264K
代理商: IS75V16F128GS32-7065BI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00D
03/24/03
19
IS75V16F128GS32
ISSI
FLASH MEMORY COMMAND DEFINITIONS - FLASH 1 or FLASH 2
Notes:
1. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
2. This command is valid during Fast Mode.
3. This command is valid while
RESET
= V
ID
4. The valid address is A6 to A0.
5. This command is valid during Hi-ROM mode.
6. The data “00h” is also acceptable.
Command
Sequence
2
1
3
4
4
Bus
Write
Cycle
Req'd
First Bus Second Bus Third Bus Fourth Bus Fifth Bus Sixth Bus
Cycle Write Cycle Write Cycle Read/Write Cycle Cycle
Data
Read / Reset
(1)
Fast Program
(2)
Erase Resume
Data
Data
Addr.
Addr.
Addr.
Addr.
Data
Addr.
Data
Addr.
Data
Read / Reset
(1)
SGA
60h
SGA
SGA
55h
F0h
AAh
B0h
RA
55h
AAh
F0h
RD
SD
40h
88h
BA
XXXh
30h
A0h
90h
98h
55h
Set to Fast
Mode
(2)
Autoselect
Program
Program Suspend
Program Resume
Sector Erase
Erase Suspend
Query
(4)
Hi-ROM
Entry
90h
PA
55h
AAh
PD
A0h
3
3
4
1
Extended Sector
(3)
Reset from Fast
Mode
(2)
Hi-ROM
Exit
(5)
555h
AAh
2AAh
55h
555h
A0h
00h
1
Hi-ROM
Program
(5)
Chip Erase
2
3
4
1
1
6
6
1
XXXh
555h
555h
555h
BA
BA
555h
555h
555h
555h
(BA)
55h
AAh
AAh
2AAh
555h
2AAh
(BA)
555h
2AAh
555h
30h
AAh
AAh
2AAh
2AAh
55h
55h
555h
555h
80h
80h
555h
555h
AAh
AAh
2AAh
2AAh
55h
55h
555h
SA
10h
30h
BA
B0h
60h
555h
AAh
2AAh
55h
555h
20h
XXXh
PA
PD
BA
XXXh
(6)
F0H
2AAh
2AAh
55h
555h
555h
(HRBA)
90h
XXXh
PD
(HRA)
PA
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