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參數(shù)資料
| 型號(hào)： | IS75V16F128GS32-7065BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA107 |
| 封裝： | 9 X 10 MM, 0.80 MM PITCH, FBGA-107 |
| 文件頁數(shù)： | 7/52頁 |
| 文件大?。?/td> | 264K |
| 代理商： | IS75V16F128GS32-7065BI |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00D
03/24/03
7
IS75V16F128GS32
ISSI
DC CHARACTERISTICS
(Continued)
Symbol Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
PD
8
r
PSRAM V
CC
Power
Down Current
(8M Partial)
(8)
Input Low Level
Input High Level (FLASH 1 or FLASH 2 )
Input High Level (PSRAM)
Voltage for Sector Protection
and Temp. Unprotection(
RESET
)
(4)
Voltage for
WP
/ACC
Sector Protection/Unprotection
and Program Acceleration
(4)
Output Low Level
(PSRAM)
Output High Level
(PSRAM)
Output Low Level
(Flash)
Output High Level
(Flash)
FLASH Low Vccf
Lock-Out Voltage
V
CC
r = V
CC
r max.,
CE1
r
≥
V
CC
r - 0.2 V
CE2r
≤
0.2 V, V
IN
Cycle time = t
RC
min
—
—
80
μ
A
V
IL
V
IH
V
IH
V
ID
-0.3
—
0.5
V
V
V
V
V
CC
f
X
0.75 —
V
CC
r
X
0.75 —
11.5
V
CC
f + 0.3
V
CC
r + 0.3
12.5
—
V
ACC
8.5
9.0
9.5
V
V
OL
V
CC
r = V
CC
r min., V
CCS
=V
CCS
min.
I
OL
= 1.0 mA
V
CC
r = V
CC
r min., V
CCS
=V
CCS
min.
I
OH
= -0.5 mA
V
CC
f = V
CC
f min., V
CCS
=V
CCS
min.
I
OL
= 4.0 mA
V
CC
f = V
CC
f min., V
CCS
=V
CCS
min.
I
OH
= -0.1 mA
—
—
0.4
V
V
OH
2.2
—
—
V
V
OL
—
—
0.45
V
V
OH
V
CC
f - 0.4
—
—
V
V
LKO
2.3
2.4
2.5
V
Notes:
1. ICC current listed includes both the DC operating current and the frequency dependent component.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
4. Applicable for only VCCf applying.
5. Embedded Algorithm (program or erase) is in progress. (@5 MHz)
6. ISB2 r depends on VIN cycle time. Please refer to “APPENDIX A”.
7. Standby current listed is for each FLASH chip.
8. Standby and Power down currents are reduced with Vccr
<
3.0 V .
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