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| 型號： | IS75V16F128GS32-7065BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | 存儲器 |
| 英文描述： | 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA107 |
| 封裝： | 9 X 10 MM, 0.80 MM PITCH, FBGA-107 |
| 文件頁數(shù)： | 6/52頁 |
| 文件大?。?/td> | 264K |
| 代理商： | IS75V16F128GS32-7065BI |
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6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00D
03/24/03
IS75V16F128GS32
ISSI
DC CHARACTERISTICS
Symbol Parameter
I
LI
Input Leakage
I
LO
Output Leakage
I
LIT
RESET
Inputs
Leakage Current
I
CC
1f
FLASH Vcc
(1)
Active Current (Read)
Test Conditions
V
IN
=GND to V
CC
f, V
CC
r
V
OUT
=GND to V
CC
f, V
CC
r
V
CC
f=V
CC
f max.,
RESET
= 12.5V
CE
f=V
IL
,
OE
=V
IH
Min.
-1.0
-1.0
—
Typ.
—
—
—
Max.
+1.0
+1.0
35
Unit
μA
μA
μA
tCycle = 5Mhz
—
—
18
mA
tCycle = 1Mhz
—
—
—
—
4
mA
mA
I
CC
2f
FLASH Vcc Active
(2)
Current(Program/Erase)
FLASH Vcc Active
(5)
Current
(Read-While-Program)
FLASH Vcc Active
(5)
Current
(Read-While-Erase)
FLASH Vcc Active
Current
(Erase-Suspend-Program)
WP
/ACC Acceleration
Program Current
PSRAM Vcc Active
Current
CE
f=V
IL
,
OE
=V
IH
CE
f=V
IL
,
OE
=V
IH
35
I
CC
3f
—
—
53
mA
I
CC
4f
CE
f=V
IL
,
OE
=V
IH
—
—
53
mA
I
CC
5f
CE
f=V
IL
,
OE
=V
IH
—
—
40
mA
I
ACC
V
CC
f = Vcc max,
WP
/ACC = V
ACC
max
V
CC
r = Vccr max,
CE
1r=V
IL
, CE2r=V
IH
,
V
IN
=V
IH
or V
IL
,
I
OUT
=0 mA
V
CC
f = Vccf max,
CE
f= V
CC
f + 0.3V,
RESET
=
V
CC
f + 0.3V
,
WP
/ACC = V
CC
f + 0.3V
V
CC
f = Vccf max,
RESET
=
GND + 0.3V,
WP
/ACC = V
CC
f + 0.3V
—
—
20
mA
I
CC
1r
trc / twc = min
—
—
25
mA
trc / twc = 1 μs
—
—
3
mA
I
SB
1f
FLASH Vcc
Standby Current
(7)
—
1
5
μA
I
SB
2f
FLASH Vcc
(7)
Standby Current
(
RESET
)
FLASH Vcc
(3,7)
Current
(Automatic Sleep Mode)
—
1
5
μA
I
SB
3f
V
CC
f = Vccf max,
CE
f = GND + 0.3V,
RESET
= V
CC
f + 0.3V,
WP
/ACC = V
CC
f + 0.3V,
V
IN
=
V
CC
f + 0.3V
OR
GND + 0.3V
V
CC
r = Vccr max,
CE1
r
≥
V
CC
r -0.2V,
CE2r
≥
V
CC
r -0.2V,
V
IN
≤
0.2 V or V
IN
≥
V
CC
r -0.2V
V
CC
r = V
CC
r max.,
CE1
r
≥
V
CC
r - 0.2 V
CE2r
≤
0.2 V, V
IN
Cycle time = t
RC
min
V
CC
r = V
CC
r max.,
CE1
r
≥
V
CC
r - 0.2 V
CE2r
≤
0.2 V, V
IN
Cycle time = t
RC
min
—
1
5
μA
I
SB
1r
PSRAM Vcc Standby
(8)
Current
—
—
110
μA
I
PDS
r
PSRAM V
CC
Power
Down Current
(Sleep Mode)
PSRAM V
CC
Power
(8)
Down Current
(Nap Mode)
—
—
10
μ
A
I
PDN
r
—
—
65
μ
A
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