- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224103 > K7R323682 (SAMSUNG SEMICONDUCTOR CO. LTD.) 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | K7R323682 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM |
| 中文描述： | 1Mx36 |
| 文件頁數(shù)： | 3/19頁 |
| 文件大?。?/td> | 201K |
| 代理商： | K7R323682 |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
- 11 -
Rev 2.0
Dec. 2003
K7R323682M
K7R321882M
K7R320982M
Note: For power-up, V IH
≤ VDDQ+0.3V and VDD ≤ 1.7V and VDDQ ≤ 1.4V t ≤ 200ms
VDDQ
VIL
VDDQ+0.5V
20% tKHKH(MIN)
VSS
VIH
VSS-0.5V
20% tKHKH(MIN)
Undershoot Timing
Overershoot Timing
OPERATING CONDITIONS (0
°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
Min
MAX
UNIT
Supply Voltage
VDD
1.7
1.9
V
VDDQ
1.4
1.9
V
Reference Voltage
V REF
0.68
0.95
V
Ground
VSS
0
V
VDDQ/2
50
SRAM
Zo=50
0.75V
VREF
ZQ
250
AC TEST OUTPUT LOAD
AC TEST CONDITIONS
Note: Parameters are tested with RQ=250
Parameter
Symbol
Value
Unit
Core Power Supply Voltage
VDD
1.7~1.9
V
Output Power Supply Voltage
VDDQ
1.4~1.9
V
Input High/Low Level
VIH/VIL
1.25/0.25
V
Input Reference Level
VREF
0.75
V
Input Rise/Fall Time
TR/T F
0.3/0.3
ns
Output Timing Reference Level
VDDQ/2
V
AC ELECTRICAL CHARACTERISTICS (VDD=1.8V
±0.1V, TA=0°C to +70°C)
Notes: 1. This condition is for AC function test only, not for AC parameter test.
2. To maintain a valid level, the transitioning edge of the input must :
a) Sustain a constant slew rate from the current AC level through the target AC level, VIL(AC) or VIH(AC)
b) Reach at least the target AC level
c) After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or V IH(DC)
PARAMETER
SYMBOL
MIN
MAX
UNIT
NOTES
Input High Voltage
VIH (AC)
VREF + 0.2
-
V
1,2
Input Low Voltage
V IL (AC)
-
VREF - 0.2
V
1,2
VDDQ+0.25V
VSS-0.25V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K971 | 85.05 mm2, COPPER ALLOY, TIN FINISH, RING TERMINAL |
| K972 | 85.05 mm2, COPPER ALLOY, TIN FINISH, RING TERMINAL |
| K973 | 85.05 mm2, COPPER ALLOY, TIN FINISH, RING TERMINAL |
| KBJ402G | 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
| KBPC3508W | 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7R323682C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM |
| K7R323682C-EC25000 | 制造商:Samsung SDI 功能描述: |
| K7R323682C-FC16000 | 制造商:Samsung 功能描述:32M 32MSYNC QUAD DATA RATE II X36 FBGA - Trays |
| K7R323682C-FC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM |
| K7R323682C-FC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。