參數(shù)資料
型號: K7R323682
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
中文描述: 1Mx36
文件頁數(shù): 6/19頁
文件大?。?/td> 201K
代理商: K7R323682
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
- 14 -
Rev 2.0
Dec. 2003
K7R323682M
K7R321882M
K7R320982M
tKLKH
tKHKH
tKHKL
tAVKH tKHAX
A1
A2
A3
tIVKH tKHIX
tCHQX 1
tKHCH
tCHQV
tCHQX
tCHQZ
tCQHQV
tCQHQX
tCHCQX
tCHCQV
tCHQV
tCHCQX
tCHCQV
tKLKH
tKHKH
tKHKL
tKH K H
Note : 1. Q1-1 refers to output from address A1+0, Q1-2 refers to output from address A1+1 i.e. the next internal burst address following A1+0.
2. Outputs are disabled one cycle after a NOP.
K
SA
R
K
Q(Data Out)
C
TIMING WAVE FORMS OF READ AND NOP
Don
t Care
Undefined
CQ
Q1-1
Q1-2
Q2-1
Q2-2
Q3-1
tKLKH
tKHKH
tKH K H
tKHKL
tAVKH
tKHAX
A1
A2
A3
D1-1
D1-2
D2-1
D2-2
K
SA
W
K
D(Data In)
TIMING WAVE FORMS OF WRITE AND NOP
D3-1
D3-2
tIVKH
tKHIX
tDVKH
tKHDX
Don
t Care
Undefined
Note: 1.D1-1 refers to input to address A1+0, D1-2 refers to input to address A1+1, i.e the next internal burst address following A1+ 0.
2. BWx ( NWx ) assumed active.
READ
NOP
READ
WRITE
NOP
WRITE
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