- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373088 > K9K4G08U1M (SAMSUNG SEMICONDUCTOR CO. LTD.) 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | K9K4G08U1M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory |
| 中文描述： | 256M × 8位/ 128M的× 16位/ 512M × 8位NAND閃存 |
| 文件頁數(shù)： | 12/40頁 |
| 文件大小： | 839K |
| 代理商： | K9K4G08U1M |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當(dāng)前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁
FLASH MEMORY
12
Preliminary
K9F2G08U0M K9F2G16U0M
K9K4G08U1M
CAPACITANCE
(
T
A
=25
°
C, V
CC
=3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1. The
device
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
. Do not erase or pro-
gram factory-marked bad blocks.
Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
cycles.
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
2,008
-
2,048
Blocks
AC TEST CONDITION
(K9F2GXXU0M-XCB0 :TA=0 to 70
°
C, K9F2GXXU0M-XIB0:TA=-40 to 85
°
C
K9F2GXXU0M : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F2GXXU0M
Input Pulse Levels
0V to Vcc
Input Rise and Fall Times
5ns
Input and Output Timing Levels
Vcc/2
Output Load
1 TTL GATE and CL=50pF
Program / Erase Characteristics
NOTE
: 1. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at Vcc of 3.3V and 25
°
C
2. Max. time of
t
CBSY
depends on timing between internal program completion and data in
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
*1
-
200
700
μ
s
Dummy Busy Time for Cache Program
t
CBSY
*2
3
700
μ
s
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
4
cycles
Spare Array
-
-
4
cycles
Block Erase Time
t
BERS
-
2
3
ms
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH.
2. WP and PRE should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
WE
RE
WP
PRE
Mode
H
L
L
H
X
X
Read Mode Command Input
Address Input(5clock)
L
H
L
H
X
X
H
L
L
H
H
X
Write Mode Command Input
Address Input(5clock)
L
H
L
H
H
X
L
L
L
H
H
X
Data Input
L
L
L
H
X
X
Data Output
X
X
X
X
H
X
X
During Read(Busy)
X
X
X
X
X
H
X
During Program(Busy)
X
X
X
X
X
H
X
During Erase(Busy)
X
X
*1
X
X
X
L
X
Write Protect
X
X
H
X
X
0V/V
CC
*2
0V/V
CC
*2
Stand-by
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9S1208V0M-SSB0 | 64M x 8 Bit SmartMedia Card |
| K9S1208V0 | 64MB & 128MB SmartMediaTM Card |
| K9D1G08V0M | 64MB & 128MB SmartMediaTM Card |
| K9S6408V0A-SSB0 | 8M x 8 Bit SmartMediaTM Card |
| KA-3020 | 3x2mm SINGLE COLOR SURFACE MOUNT LED LAMPS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K4G16Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9K4G16U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9K8G08U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory |
| K9K8G08U0A-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
| K9K8G08U0A-PCB0T00 | 制造商:Samsung SDI 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。