參數(shù)資料
型號: K9K4G08U1M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
中文描述: 256M × 8位/ 128M的× 16位/ 512M × 8位NAND閃存
文件頁數(shù): 38/40頁
文件大?。?/td> 839K
代理商: K9K4G08U1M
FLASH MEMORY
38
Preliminary
K9F2G08U0M K9F2G16U0M
K9K4G08U1M
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of auto-
page read function. Auto-page read function is enabled only when PRE pin is tied to V
cc.
Serial access may be done after power-on
without latency. Power-On Auto Read mode is available only on 3.3V device(K9F2GXXU0M).
Figure 16. Power-On Auto-Read
V
CC
CE
CLE
I/O
X
ALE
RE
WE
1st
~ 1.8V
PRE
R/B
2nd
3rd
....
n th
t
R
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