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參數(shù)資料
| 型號： | K9K4G08U1M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory |
| 中文描述： | 256M × 8位/ 128M的× 16位/ 512M × 8位NAND閃存 |
| 文件頁數(shù)： | 37/40頁 |
| 文件大?。?/td> | 839K |
| 代理商： | K9K4G08U1M |
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FLASH MEMORY
37
Preliminary
K9F2G08U0M K9F2G16U0M
K9K4G08U1M
Figure 14. Read ID Operation
CE
CLE
I/O
X
ALE
RE
WE
90h
00h
Address. 1cycle
Maker code
Device code
t
CEA
t
AR
t
REA
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Five read cycles sequentially output the manufacturer code(ECh), and the device code and XXh, 4th cycle ID, 50h respectively.
The command register remains in Read ID mode until further commands are issued to it. Figure 14 shows the operation sequence.
Device
Code*
80h
4th Cyc.*
ECh
Figure 15. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 3 for device status after reset operation. If the device is
already in reset state a new reset command will be accepted by the command register. The R/B pin transitions to low for tRST after
the Reset command is written. Refer to Figure 15 below.
FFh
I/O
X
R/B
t
RST
t
WHR
t
CLR
Device
Device Code*(2nd Cycle)
3rd Cycle
4th Cycle*
K9F2G08U0M
DAh
80h
15h
K9F2G16U0M
CAh
80h
55h
Table3. Device Status
After Power-up
After Reset
PRE status
High
Low
Waiting for next command
Operation Mode
First page data access is ready
00h command is latched
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K4G16Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9K4G16U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9K8G08U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory |
| K9K8G08U0A-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
| K9K8G08U0A-PCB0T00 | 制造商:Samsung SDI 功能描述: |
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