參數(shù)資料
型號： K9K4G08U1M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位/ 512M × 8位NAND閃存
文件頁數(shù)： 4/40頁
文件大小： 839K
代理商： K9K4G08U1M
FLASH MEMORY
4
Preliminary
K9F2G08U0M K9F2G16U0M
K9K4G08U1M
GENERAL DESCRIPTION
Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXU0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost-
effective solution for the solid state mass storage market. A program operation can be performed in typical 200
μ
s on the 2112-
byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)
or 64K-word(X16 device) block. Data in the data page can be read out at 30ns cycle time per byte(X8 device) or word(X16 device)..
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates
all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the
write-intensive systems can take advantage of the K9F2GXXU0M
′
s extended reliability of 100K program/erase cycles by providing
ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2GXXU0M is an optimum solution for large nonvolatile
storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
Voltage Supply
-2.7 V ~3.6 V
Organization
- Memory Cell Array
-X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit
-X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit
- Data Register
-X8 device(K9F2G08X0M): (2K + 64)bit x8bit
-X16 device(K9F2G16X0M): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9F2G08X0M) : (2K + 64)bit x8bit
-X16 device(K9F2G16X0M) : (1K + 32)bit x16bit
Automatic Program and Erase
- Page Program
-X8 device(K9F2G08X0M) : (2K + 64)Byte
-X16 device(K9F2G16X0M) : (1K + 32)Word
- Block Erase
-X8 device(K9F2G08X0M) : (128K + 4K)Byte
-X16 device(K9F2G16X0M) : (64K + 2K)Word
Page Read Operation
- Page Size
- X8 device(K9F2G08X0M) : 2K-Byte
- X16 device(K9F2G16X0M) : 1K-Word
- Random Read : 25
μ
s(Max.)
- Serial Access : 30ns(Min.)
256M x 8 Bit / 128M x 16 Bit/ 512M x 8 Bit NAND Flash Memory
Fast Write Cycle Time
- Page Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Cache Program Operation for High Performance Program
Power-On Auto-Read Operation
Intelligent Copy-Back Operation
Unique ID for Copyright Protection
Package :
- K9F2GXXU0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2GXXU0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9K4G08U1M-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 0.65 mm pitch)
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F2G08U0M-Y,P
2.7 ~ 3.6V
X8
TSOP1
K9F2G16U0M-Y,P
X16
K9K4G08U1M-I
X8
52ULGA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K4G16Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G16U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K8G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
K9K8G08U0A-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9K8G08U0A-PCB0T00 制造商:Samsung SDI 功能描述:
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