參數(shù)資料
型號(hào): K9K4G08U1M
廠(chǎng)商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
中文描述: 256M × 8位/ 128M的× 16位/ 512M × 8位NAND閃存
文件頁(yè)數(shù): 18/40頁(yè)
文件大?。?/td> 839K
代理商: K9K4G08U1M
FLASH MEMORY
18
Preliminary
K9F2G08U0M K9F2G16U0M
K9K4G08U1M
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal
2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system
design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activat-
ing CE during the data-loading and serial access would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Address(5Cycles)
80h
Data Input
CE
CLE
ALE
WE
Data Input
CE don’t-care
10h
Address(5Cycle)
00h
CE
CLE
ALE
WE
Data Output(serial access)
CE don’t-care
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
7
Figure 5. Read Operation with CE don’t-care.
30h
I/Ox
I/Ox
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K4G16Q0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G16U0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K8G08U0A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
K9K8G08U0A-P 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9K8G08U0A-PCB0T00 制造商:Samsung SDI 功能描述: