參數(shù)資料
型號: KM44S4020CT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 4Bit x 2 Banks Synchronous DRAM(2M x 4位 x 2組同步動態(tài)RAM)
中文描述: 2米x 4位× 2銀行同步DRAM(2米× 4位× 2組同步動態(tài)RAM)的
文件頁數(shù): 32/44頁
文件大?。?/td> 604K
代理商: KM44S4020CT
TIMING DIAGRAM - I
CMOS SDRAM
ELECTRONICS
REV. 4 Nov. '97
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Page Read & Write Cycle at Same Bank @Burst Length=4
HIGH
Row Active
(A-Bank)
Read
(A-Bank)
Write
(A-Bank)
Precharge
(A-Bank)
: Don't care
*Note :
1. To write data before burst read ends, DQM should be asserted three cycle prior to write
command to avoid bus contention.
2. Row precharge will interrupt writing. Last data input, t
3. DQM should mask invalid input data on precharge command cycle when asserting precharge
before end of burst. Input data after Row precharge cycle will be masked internally.
RDL
before Row precharge, will be written.
Read
(A-Bank)
tRCD
*Note 2
tRDL
*Note 1
*Note 3
tCDL
Qa0
Qa1
Qb0
Qb1
Qb2
Qa0
Qa1
Qb0
Qb1
Dc0
Dc1
Dd0
Dd1
Dc0
Dc1
Dd0
Dd1
Write
(A-Bank)
BA
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
Ra
Ca0
Cb0
Cc0
Cd0
Ra
相關(guān)PDF資料
PDF描述
KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM(16M x 4位 x 4組同步動態(tài)RAM)
KM44V1000D 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode(1M x 4位CMOS 動態(tài)RAM(帶快速頁模式))
KM44V16000B 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式))
KM44V16100B 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式))
KM44V16100C 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM44S4020CT-G10 制造商:SEC 功能描述:SDRAM, 4M x 4, 44 Pin, Plastic, TSOP
KM44V1000D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
KM44V4000AS-6 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP
KM44V4000C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
KM44V4100AT-7 制造商:Samsung Semiconductor 功能描述: