- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373157 > KM44S4020CT (SAMSUNG SEMICONDUCTOR CO. LTD.) 2M x 4Bit x 2 Banks Synchronous DRAM(2M x 4位 x 2組同步動態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | KM44S4020CT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 4Bit x 2 Banks Synchronous DRAM(2M x 4位 x 2組同步動態(tài)RAM) |
| 中文描述： | 2米x 4位× 2銀行同步DRAM（2米× 4位× 2組同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 5/44頁 |
| 文件大小： | 604K |
| 代理商： | KM44S4020CT |
第1頁第2頁第3頁第4頁當(dāng)前第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁
KM44S4020C
REV. 5 Feb. '98
CMOS SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-8
-H
-L
-10
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
85
80
80
70
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
1
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
1
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
15
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
4
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
2
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
1
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
25
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
15
mA
Operating current
(Burst mode)
I
CC4
I
OL
= 0 mA
Page burst
2Banks activated
t
CCD
= 2CLKs
3
110
90
90
90
mA
1
2
80
90
80
80
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
55
55
55
50
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
1
mA
3
250
uA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. KM44S4020CT-G**
4. KM44S4020CT-F**
Notes :
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM44S64230A | 16M x 4Bit x 4 Banks Synchronous DRAM(16M x 4位 x 4組同步動態(tài)RAM) |
| KM44V1000D | 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode(1M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V16000B | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V16100B | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V16100C | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44S4020CT-G10 | 制造商:SEC 功能描述:SDRAM, 4M x 4, 44 Pin, Plastic, TSOP |
| KM44V1000D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4000AS-6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP |
| KM44V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4100AT-7 | 制造商:Samsung Semiconductor 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。