參數(shù)資料
型號: KSZ8692XPB
廠商: Micrel Inc
文件頁數(shù): 17/42頁
文件大?。?/td> 0K
描述: IC ARM9 PHY 10/100MBPS 400-PBGA
標準包裝: 40
系列: KSZx692
應用: 網(wǎng)絡和通信
核心處理器: ARM9
程序存儲器類型: 外部程序存儲器
控制器系列: KSZ
接口: EBI/EMI,以太網(wǎng),I²C,I²S,PCI,SPI,UART/USART,USB
輸入/輸出數(shù): 20
電源電壓: 1.235 V ~ 1.365 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 400-BGA
包裝: 托盤
供應商設備封裝: 400-PBGA(24x24)
產(chǎn)品目錄頁面: 1080 (CN2011-ZH PDF)
其它名稱: 576-3537
Micrel, Inc.
KSZ8692MPB/KSZ8692XPB
March 2010
24
M9999-031810-4.0
Pin Number
Pin Name
Pin Type
Pin Description
T2, U1, L5,
N4, P3, R2,
T1, M4, K5,
N3, P2, R1,
L4, M3, P1,
K4
SDATA[15..0]
Ipu/O
SRAM DATA Bus.
Bidirectional Bus for 16-bit DATA In and DATA Out. The
KSZ8692MPB/KSZ8692XPB also supports 8-bit data bus for
ROM/SRAM/FLASH/EXTIO cycles.
This data bus is shared between NAND, ROM/SRAM/FLASH/EXTIO devices.
L3
ECS2
O
External I/O Chip Select 2, asserted Low.
Three External I/O banks are provided for external memory-mapped I/O
operations. Each I/O bank stores up to 16Kbytes. ECSN signals indicate
which of the three I/O banks is selected.
N1
ECS1
O
External I/O Chip Select 1, asserted Low.
Three External I/O banks are provided for external memory-mapped I/O
operations. Each I/O bank stores up to 16Kbytes. ECSN signals indicate
which of the three I/O banks is selected.
M2
ECS0
O
External I/O Chip Select 0, asserted Low.
Three External I/O banks are provided for external memory-mapped I/O
operations. Each I/O bank stores up to 16Kbytes. ECSN signals indicate
which of the three I/O banks is selected.
K3
RCSN1
O
ROM/SRAM/FLASH(NOR) Chip select 1, asserted Low.
The KSZ8692MPB/KSZ8692XPB can access up to two external
ROM/SRAM/FLASH memory banks. The RCSN pins can be controlled to
map the CPU addresses into physical memory banks.
L1
RCSN0
O
ROM/SRAM/FLASH(NOR) Chip select 0, asserted Low.
The KSZ8692MPB/KSZ8692XPB can access up to two external
ROM/SRAM/FLASH memory banks. The RCSN pins can be controlled to
map the CPU addresses into physical memory banks.
This bank is configurable as boot option
N2
EWAITN
I
External Wait asserted Low.
This signal is asserted when an external I/O device or
ROM/SRAM/FLASH(NOR) bank needs more access cycles than those
defined in the corresponding control register.
M1
EROEN
(WRSTPLS)
Ipd/O
ROM/SRAM/FLASH(NOR) and EXTIO Output Enable, asserted Low.
When asserted, this signal controls the output enable port of the specified
ROM/SRAM/FLASH memory and EXTIO device.
J5
ERWEN1
O
ROM/SRAM/FLASH(NOR) and EXTIO Write Byte Enable, asserted Low.
When asserted, this signal controls the byte write enable of the memory
device SDATA[15..8] for ROM/SRAM/FLASH and EXTIO access.
J4
ERWEN0
Ipd/O
ROM/SRAM/FLASH(NOR) and EXTIO Write Byte Enable, asserted Low.
When asserted, this signal controls the byte write enable of the memory
device SDATA[7..0 or 15..0] for ROM/SRAM/FLASH and EXTIO access.
R3
NCLE
Ipd/O
NAND command Latch Enable
NCLE controls the activating path for command sent to NAND flash.
U2
NALE
Ipd/O
NAND Address Latch Enable
NALE controls the activating path for address sent to NAND flash.
T3
NCEN1
O
NAND Bank Chip Enable 1, asserted low
NAND device bank 1 selection control.
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