參數(shù)資料
型號: LH28F320S3H-L
廠商: Sharp Corporation
英文描述: 32 M-bit(4 MB x 8/2 MB x 16)Smart3 Flash Memories(32M位 (4M位 x 8/2M位 x 16) Smart3 技術(shù)閃速存儲器)
中文描述: 32 M位(4字節(jié)× 8 / 2 MB的× 16)Smart3閃存(32兆位(4分位x 8/2M位× 16)Smart3技術(shù)閃速存儲器)
文件頁數(shù): 1/51頁
文件大?。?/td> 340K
代理商: LH28F320S3H-L
- 1 -
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
PRELMNARY
– 2.7 μs/byte write transfer rate
Common Flash Interface (CFI)
– Universal & upgradable interface
Scalable Command Set (SCS)
DESCRIPTION
The LH28F320S3-L/S3H-L flash memories with
Smart 3 technology are high-density, low-cost,
nonvolatile, read/write storage solution for a wide
range of applications, having high programming
performance is achieved through highly-optimized
page buffer operations. Their symmetrically-blocked
architecture, flexible voltage and enhanced cycling
capability provide for highly flexible component
suitable for resident flash arrays, SIMMs and
memory
cards.
Their
capabilities provide for an ideal solution for code +
data storage applications. For secure code storage
applications, such as networking, where code is
either directly executed out of flash or downloaded
to DRAM, the LH28F320S3-L/S3H-L offer three
levels of protection : absolute protection with V
PP
at
GND, selective hardware block locking, or flexible
software block locking. These alternatives give
designers ultimate control of their code security
needs. The LH28F320S3-L/S3H-L are conformed
to the flash Scalable Command Set (SCS) and the
Common Flash Interface (CFI) specification which
enable universal and upgradable interface, enable
the highest system/device data transfer rates and
minimize device and system-level implementation
costs.
enhanced
suspend
FEATURES
Smart 3 technology
– 2.7 V or 3.3 V V
CC
– 2.7 V, 3.3 V or 5 V V
PP
High speed write performance
– Two 32-byte page buffers
High performance read access time
LH28F320S3-L11/S3H-L11
– 110 ns (3.3±0.3 V)/140 ns (2.7 to 3.6 V)
LH28F320S3-L14/S3H-L14
– 140 ns (3.3±0.3 V)/160 ns (2.7 to 3.6 V)
Enhanced automated suspend options
– Write suspend to read
– Block erase suspend to write
– Block erase suspend to read
Enhanced data protection features
– Absolute protection with V
PP
= GND
– Flexible block locking
– Erase/write lockout during power transitions
SRAM-compatible write interface
User-configurable x8 or x16 operation
High-density symmetrically-blocked architecture
– Sixty-four 64 k-byte erasable blocks
Enhanced cycling capability
– 100 000 block erase cycles
– 6.4 million block erase cycles/chip
Low power management
– Deep power-down mode
– Automatic power saving mode decreases I
CC
in static mode
Automated write and erase
– Command user interface
– Status register
ETOX
TM
V nonvolatile flash technology
Packages
– 56-pin SSOP (SSOP056-P-0600)
– 80-ball CSP (FBGA080/064-P-0818)
ETOX is a trademark of Intel Corporation.
LH28F320S3-L/S3H-L
32 M-bit (4 MB x 8/2 MB x 16) Smart 3
Flash Memories (Fast Programming)
LH28F320S3-L/S3H-L
相關(guān)PDF資料
PDF描述
LH28F320S3HNS-L11 32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3NS Smart voltage 32Mbit Flash Memory
LH28F320S3TD-L10 32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory
LH28F320S3 32M (4M x8/2M x16)Smart 3 Flash Memory(32M (4M x8/2M x16) Smart3 技術(shù) 閃速存儲器)
LH28F320S5H-L 32M-BIT ( 2Mbit x16 / 4Mbit x8 )Boot Block Flash MEMORY(32M位( 2M位 x16 / 4M位 x8 )Boot Block 閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F320S3H-L11 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3H-L14 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3HNS-L11 功能描述:IC FLASH 32MBIT 110NS 56SSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
LH28F320S3HNS-L14 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3HNS-ZM 功能描述:IC FLASH 32MBIT 110NS 56SSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M(8Mx32) 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:托盤 其它名稱:Q2841869