參數(shù)資料
型號(hào): LH28F320S3H-L
廠商: Sharp Corporation
英文描述: 32 M-bit(4 MB x 8/2 MB x 16)Smart3 Flash Memories(32M位 (4M位 x 8/2M位 x 16) Smart3 技術(shù)閃速存儲(chǔ)器)
中文描述: 32 M位(4字節(jié)× 8 / 2 MB的× 16)Smart3閃存(32兆位(4分位x 8/2M位× 16)Smart3技術(shù)閃速存儲(chǔ)器)
文件頁(yè)數(shù): 6/51頁(yè)
文件大小: 340K
代理商: LH28F320S3H-L
- 6 -
PRELMNARY
LH28F320S3-L/S3H-L
erase is suspended and (multi) word/byte write are
inactive, (multi) word/byte write are suspended, or
the device is in deep power-down mode. The other
3 alternate configurations are all pulse mode for
use as a system interrupt.
The access time is 110 ns or 140 ns (t
AVQV
) at the
V
CC
supply voltage range of 3.0 to 3.6 V over the
temperature range, 0 to +70°C (LH28F320S3-L)/
–40 to +85°C (LH28F320S3H-L). At 2.7 to 3.6 V
V
CC
, the access time is 140 ns or 160 ns.
The Automatic Power Saving (APS) feature
substantially reduces active current when the
device is in static mode (addresses not switching).
In APS mode, the typical I
CCR
current is 3 mA at
2.7 V and 3.3 V V
CC
.
When either CE
0
# or CE
1
#, and RP# pins are at
V
CC
, the I
CC
CMOS standby mode is enabled.
When the RP# pin is at GND, deep power-down
mode is enabled which minimizes power
consumption and provides write protection during
reset. A reset time (t
PHQV
) is required from RP#
switching high until outputs are valid. Likewise, the
device has a wake time (t
PHEL
writes to the CUI are recognized. With RP# at
GND, the WSM is reset and the status register is
cleared.
相關(guān)PDF資料
PDF描述
LH28F320S3HNS-L11 32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3NS Smart voltage 32Mbit Flash Memory
LH28F320S3TD-L10 32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory
LH28F320S3 32M (4M x8/2M x16)Smart 3 Flash Memory(32M (4M x8/2M x16) Smart3 技術(shù) 閃速存儲(chǔ)器)
LH28F320S5H-L 32M-BIT ( 2Mbit x16 / 4Mbit x8 )Boot Block Flash MEMORY(32M位( 2M位 x16 / 4M位 x8 )Boot Block 閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F320S3H-L11 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3H-L14 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3HNS-L11 功能描述:IC FLASH 32MBIT 110NS 56SSOP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:FLASH 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán)
LH28F320S3HNS-L14 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3HNS-ZM 功能描述:IC FLASH 32MBIT 110NS 56SSOP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SDRAM 存儲(chǔ)容量:256M(8Mx32) 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:托盤(pán) 其它名稱(chēng):Q2841869