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參數(shù)資料
| 型號： | LTE42008R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 78K |
| 代理商： | LTE42008R |
1997 Feb 24
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42008R
FEATURES
Diffused emitter ballasting resistors provide excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Input matching cell improves input impedance and
allows an easier design of circuits.
APPLICATION
Common emitter class-A linear power amplifiers up
to 4.2 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT440A metal ceramic flange package with the emitter
connected to the flange.
PINNING - SOT440A
PIN
DESCRIPTION
1
2
3
collector
base
emitter connected to flange
Fig.1 Simplified outline and symbol.
Marking code
: 196
olumns
e
c
b
MAM131
3
1
2
Top view
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common emitter class-A amplifier.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L1
(mW)
≥
800
G
po
(dB)
Z
i
(
)
Z
L
(
)
Class-A (CW) linear
4.2
16
250
>7
7.5 + j23.5
2.5
j9
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTE42012R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistor |
| LTE4206 | 制造商:LITEON 制造商全稱:Lite-On Technology Corporation 功能描述:SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES |
| LTE-4206 | 功能描述:紅外發(fā)射源 Infrared 940nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| LTE-4206_1 | 制造商:LITEON 制造商全稱:Lite-On Technology Corporation 功能描述:PHOTOTRANSISTOR |
| LTE4206C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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