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參數(shù)資料
| 型號： | LTE42008R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 78K |
| 代理商： | LTE42008R |
1997 Feb 24
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42008R
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC15”
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 70
°
C
T
j
= 70
°
C; note 1
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
12
0.7
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
15
TYP.
2
MAX.
UNIT
μ
A
mA
mA
μ
A
I
CBO
collector cut-off current
V
CB
= 20 V; I
E
= 0
V
CB
= 40 V; I
E
= 0
V
CE
= 20 V; R
BE
= 250
V
EB
= 1.5 V; I
C
= 0
V
CE
= 5 V; I
C
= 250 mA
V
CB
= 16 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
V
CE
= 16 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
V
CB
= 10 V; V
EB
= 1 V;
I
C
= I
E
= 0; f = 1 MHz
150
1
0.5
0.4
150
I
CER
I
EBO
h
FE
C
cb
emitter cut-off current
emitter cut-off current
DC current gain
collector-base capacitance
pF
C
ce
collector-emitter capacitance
1.5
pF
C
eb
emitter-base capacitance
20
pF
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