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參數(shù)資料
| 型號： | M12S64322A-6TG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
| 封裝： | 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 |
| 文件頁數(shù)： | 16/46頁 |
| 文件大?。?/td> | 746K |
| 代理商： | M12S64322A-6TG |
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ES MT
M12S64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision
:
1.0
16/46
Write command
(CS ,CAS ,
WE
= Low, RAS = High)
If the mode register is in the burst write mode, this command sets the burst start
address given by the column address to begin the burst write operation. The first
write data in burst can be input with this command with subsequent data on following
clocks.
Read command
(CS , CAS = Low, RAS ,
WE
= High)
Read data is available afterCAS latency requirements have been met.
This command sets the burst start address given by the column address.
CBR (auto) refresh command
(CS , RAS , CAS = Low,
WE
, CKE = High)
This command is a request to begin the CBR refresh operation. The refresh
address is generated internally.
Before executing CBR refresh, all banks must be precharged.
After this cycle, all banks will be in the idle (precharged) state and ready for a
row activate command.
During t
RC
period (from refresh command to refresh or activate command), the
DRAM cannot accept any other command.
CLK
CLK
CKE
CKE
CS
RAS
WE
BA0, BA1
(Bank select)
BA0, BA1
(Bank select)
A10
A10
Add
Add
CAS
H
H
Col.
Fig. 4 Column address and
write command
Fig. 5 Column address and
read command
CLK
CKE
BA0, BA1
(Bank select)
A10
Add
H
Fig. 6 Auto refresh command
Col.
CS
RAS
WE
CAS
CS
RAS
WE
CAS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12S64322A-7BG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12S64322A-7TG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M13S128168A | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128168A-5BG | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128168A-5T | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12S64322A-7BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12S64322A-7TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12SW | 功能描述:測試接頭 Modular Oscilloscope RoHS:否 制造商:Murata 連接器類型: 設(shè)備類型: 顏色: 觸點(diǎn)材料: |
| M12T-04BFFB-SL7002 | 功能描述:CONN PLUG FMALE 4POS GOLD SCREW 制造商:amphenol ltw 系列:M 包裝:散裝 零件狀態(tài):在售 連接器類型:插頭，母型插口 針腳數(shù):4 外殼尺寸 - 插件:M12-4 外殼尺寸，MIL:- 安裝類型:自由懸掛 端接:螺釘 緊固類型:有螺紋 朝向:T 侵入防護(hù):IP67 - 防塵，防水 外殼材料，鍍層:鋅合金，鍍鎳 觸頭鍍層:金 特性:底殼，聯(lián)接螺母 電壓 - 額定:60VDC 額定電流:12A 觸頭鍍層厚度:- 工作溫度:-40°C ~ 105°C 標(biāo)準(zhǔn)包裝:10 |
| M12T-04BMMB-SL7002 | 功能描述:CONN RCPT MALE 4POS GOLD SCREW 制造商:amphenol ltw 系列:M 包裝:散裝 零件狀態(tài):在售 連接器類型:插座，公形引腳 針腳數(shù):4 外殼尺寸 - 插件:M12-4 外殼尺寸，MIL:- 安裝類型:自由懸掛 端接:螺釘 緊固類型:有螺紋 朝向:T 侵入防護(hù):IP67 - 防塵，防水 外殼材料，鍍層:鋅合金，鍍鎳 觸頭鍍層:金 特性:后殼 電壓 - 額定:60VDC 額定電流:12A 觸頭鍍層厚度:- 工作溫度:-40°C ~ 105°C 標(biāo)準(zhǔn)包裝:10 |
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