參數(shù)資料
型號: M36DR432B
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,雙行,頁閃存和4兆位256K x16的SRAM,多個存儲產(chǎn)品
文件頁數(shù): 2/46頁
文件大小: 328K
代理商: M36DR432B
M36DR432A, M36DR432B
2/46
DESCRIPTION
The M36DR432 is a multichip memory device con-
taining a 32 Mbit boot block Flash memory and a
4 Mbit of SRAM. The device is offered in a Stacked
LFBGA66 (0.8 mm pitch) package.
The two components are distinguished by use with
three chip enable inputs: EF for the Flash memory
and, E1S and E2S for the SRAM. The two compo-
nents are also separately power supplied and
grounded.
Figure 2. Logic Diagram
Table 1. Signal Names
AI90203
21
A0-A20
EF
DQ0-DQ15
M36DR432A
M36DR432B
GF
VSSF
16
WF
RPF
WPF
E1S
E2S
GS
WS
UBS
LBS
VSSS
VDDF VPPFVDDS
A0-A17
Address Inputs
A18-A20
Address Inputs for Flash Chip only
DQ0-DQ15
Data Input/Output
V
DDF
Flash Power Supply
V
PPF
Flash Optional Supply Voltage for Fast
Program & Erase
V
SSF
Flash Ground
V
DDS
SRAM Power Supply
V
SSS
SRAM Ground
NC
Not Connected Internally
Flash control functions
EF
Chip Enable input
GF
Output Enable input
WF
Write Enable input
RPF
Reset input
WPF
Write Protect input
SRAM control functions
E1S, E2S
Chip Enable input
GS
Output Enable input
WS
Write Enable input
UBS
Upper Byte Enable input
LBS
Lower Byte Enable input
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