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參數(shù)資料
| 型號(hào)： | M36DR432B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁(yè)閃存和4兆位256K x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品 |
| 文件頁(yè)數(shù)： | 40/46頁(yè) |
| 文件大小： | 328K |
| 代理商： | M36DR432B |
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M36DR432A, M36DR432B
40/46
Table 33. SRAM Low V
CCS
Data Retention Characteristics
(1, 2)
(T
A
= –40 to 85°C; V
DDS
= 1.65V to 2.2V)
Symbol
Parameter
Note: 1. All other Inputs V
IH
≤
V
DD
– 0.2V or V
IL
≤
0.2V.
2. Sampled only. Not 100% tested.
Figure 23. SRAM Low V
DDS
Data Retention AC Waveforms, E1S Controlled
Figure 24. SRAM Low V
DDS
Data Retention AC Waveforms, E2S Controlled
Test Condition
Min
Max
Unit
I
DDDR
Supply Current (Data Retention)
V
DDS
= 1.2V, E1S
≥
V
DDS
– 0.2V,
E2S
≥
V
DDS
– 0.2V or E2S
≤
0.2V, f = 0
10
μA
V
DR
Supply Voltage (Data Retention)
E1S
≥
V
DDS
– 0.2V, E2S
≤
0.2V, f = 0
1
2.2
V
t
CDR
Chip Disable to Power Down
E1S
≥
V
CCS
– 0.2V, E2S
≤
0.2V, f = 0
0
ns
t
R
Operation Recovery Time
t
RC
ns
AI90224
1.65 V
E1S
tCDR
E1S
≥
VDDS – 0.2V
1.2 V
VDR
VSSS
VDDS
tR
DATA RETENTION MODE
AI90225
1.65 V
E2S
tCDR
E2S
≤
0.2V
VDR
VSSS
VDDS
tR
DATA RETENTION MODE
0.4 V
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| M36DR432B100ZA6C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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| M36DR432B120ZA6C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432B120ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432BD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
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