參數(shù)資料
型號： M36DR432B
廠商： 意法半導體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個存儲產(chǎn)品
文件頁數(shù)： 41/46頁
文件大?。?/td> 328K
代理商： M36DR432B
41/46
M36DR432A, M36DR432B
Table 34. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits erased to ’1’.
Table 35. Daisy Chain Ordering Scheme
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-
vice, please contact the STMicroelectronics Sales Office nearest to you.
Example:
M36DR432A
100 ZA
6
T
Device Type
M36 = MMP (Flash + SRAM)
Architecture
D = Dual Bank, Page Mode
Operating Voltage
R = V
DDF
= V
DDS
=1.65V to 2.2V
SRAM Chip Size & Organization
4 = 4 Mbit (256K x 16 bit)
Device Function
32A = 32 Mbit (x16), Dual Bank: 1/8-7/8 partitioning, Top Boot
32B = 32 Mbit (x16), Dual Bank: 1/8-7/8 partitioning, Bottom Boot
Speed
100 = 100ns
120 = 120ns
Package
ZA = LFBGA66: 0.8mm pitch
Temperature Range
6 = –40 to 85°C
Option
T = Tape & Reel packing
C = Cypress’s SRAM
Example:
M36DR432
-ZA
T
Device Type
M36DR432
Daisy Chain
-ZA = LFBGA66: 0.8mm pitch
Option
T = Tape & Reel Packing
相關(guān)PDF資料
PDF描述
M36L0R7050B0 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050B0ZAQ 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050T0 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050T0ZAQ 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36DR432B100ZA6C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432B100ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432B120ZA6C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432B120ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432BD 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
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