參數(shù)資料
型號： M36DR432DA85ZA6T
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個存儲產(chǎn)品
文件頁數(shù)： 27/52頁
文件大?。?/td> 834K
代理商： M36DR432DA85ZA6T
27/52
M36DR432AD, M36DR432BD
Table 16. Flash DC Characteristics
Note: 1. Sampled only, not 100% tested.
2. V
PPF
may be connected to 12V power supply for a total of less than 100 hrs.
3. For standard program/erase operation V
PPF
is don’t care.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DD
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DD
±5
μA
I
CC1
Supply Current
(Read Mode)
EF = V
IL
, GF = V
IH
, f =
6MHz
3
6
mA
I
CC2
Supply Current
(Power-Down)
RPF = V
SS
± 0.2V
2
10
μA
I
CC3
Supply Current (Standby)
EF = V
DD
± 0.2V
10
50
μA
I
CC4
(1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
10
20
mA
I
CC5 (1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Read in the
other Bank
13
26
mA
I
PPF1
V
PPF
Supply Current
(Program or Erase)
V
PPF
= 12V ± 0.6V
2
5
mA
I
PPF2
V
PPF
Supply Current
(Standby or Read)
V
PPF
≤
V
DD
0.2
5
μA
V
PPF
= 12V ± 0.6V
100
400
μA
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DD
– 0.4
V
DD
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
CMOS
I
OH
= –100μA
V
DD
–0.1
V
V
PPF(2,3)
V
PPF
Supply Voltage
(Program or Erase)
–0.4
V
DD
+ 0.4
V
Double Word Program
11.4
12.6
V
相關(guān)PDF資料
PDF描述
M36DR432DA10ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432CZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432BD85ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36DR432DZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432-ZAT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
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M36DR864CB85ZA6T 功能描述:閃存 64M (4Mx16) 85ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36JGK90X 制造商:Panasonic Industrial Company 功能描述:CRT
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