參數(shù)資料
型號(hào)： M36DR432DA85ZA6T
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁(yè)閃存和4兆位256K x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品
文件頁(yè)數(shù)： 49/52頁(yè)
文件大小： 834K
代理商： M36DR432DA85ZA6T
49/52
M36DR432AD, M36DR432BD
Table 34. CFI Query System Interface Information
Offset
Data
Description
1Bh
0017h
V
DDF
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1Ch
0022h
V
DDF
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1Dh
0000h
V
PPF
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
Note: This value must be 0000h if no V
PPF
pin is present
1Eh
00C0h
V
PPF
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
Note: This value must be 0000h if no V
PPF
pin is present
1Fh
0004h
Typical timeout per single byte/word program (multi-byte program count = 1), 2
n
μs
(if supported; 0000h = not supported)
20h
0003h
Typical timeout for maximum-size multi-byte program or page write, 2
n
μs
(if supported; 0000h = not supported)
21h
000Ah
Typical timeout per individual block erase, 2
n
ms
(if supported; 0000h = not supported)
22h
0000h
Typical timeout for full chip erase, 2
n
ms
(if supported; 0000h = not supported)
23h
0003h
Maximum timeout for byte/word program, 2
n
times typical (offset 1Fh)
(0000h = not supported)
24h
0004h
Maximum timeout for multi-byte program or page write, 2
n
times typical (offset 20h)
(0000h = not supported)
25h
0002h
Maximum timeout per individual block erase, 2
n
times typical (offset 21h)
(0000h = not supported)
26h
0000h
Maximum timeout for chip erase, 2
n
times typical (offset 22h)
(0000h = not supported)
相關(guān)PDF資料
PDF描述
M36DR432DA10ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432CZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432BD85ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432B120ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36DR432DZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432-ZAT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR864CB85ZA6 功能描述:閃存 64M (4Mx16) 85ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR864CB85ZA6T 功能描述:閃存 64M (4Mx16) 85ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36JGK90X 制造商:Panasonic Industrial Company 功能描述:CRT
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