參數(shù)資料
型號: M36DR432DA85ZA6T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,雙行,頁閃存和4兆位256K x16的SRAM,多個存儲產(chǎn)品
文件頁數(shù): 43/52頁
文件大?。?/td> 834K
代理商: M36DR432DA85ZA6T
43/52
M36DR432AD, M36DR432BD
Table 25. SRAM Low V
DDS
Data Retention Characteristics
(1, 2)
Symbol
Parameter
Note: 1. All other Inputs V
IH
V
DDS
– 0.2V or V
IL
0.2V.
2. Sampled only. Not 100% tested.
Test Condition
Min
Typical
Max
Unit
I
DDDR
Supply Current (Data Retention)
V
DDS
= 1.0V, ES
V
DDS
– 0.2V
no input may exceed V
DDS
+ 2V
0.5
10
μA
V
DR
Supply Voltage (Data Retention)
ES
V
DDS
– 0.2V
1
2.2
V
t
CDR
Chip Disable to Data Retention
Time
ES
V
DDS
– 0.2V
0
ns
t
R
Operation Recovery Time
t
RC
ns
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