參數(shù)資料
型號： M36DR432DA85ZA6T
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個存儲產(chǎn)品
文件頁數(shù)： 45/52頁
文件大小： 834K
代理商： M36DR432DA85ZA6T
45/52
M36DR432AD, M36DR432BD
PART NUMBERING
Table 27. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available op-
tions (Speed, Package, etc.) or for further information on any aspect of this device, please contact the ST-
Microelectronics Sales Office nearest to you.
Example:
M36 D R 4
32A
D
10 ZA
6
T
Device Type
M36 = MMP (Flash + SRAM)
Architecture
D = Dual Bank, Page Mode
Operating Voltage
R = V
DDF
= V
DDS
= 1.65V to 2.2V
SRAM Chip Size & Organization
4 = 4 Mbit (256Kb x 16 bit)
Flash Specification Details
32A = 32 Mbit (x16), Dual Bank: 1/8-7/8 partitioning, Top Configuration
32B = 32 Mbit (x16), Dual Bank: 1/8-7/8 partitioning, Bottom Configuration
SRAM Specification Details
D = Asynchronous SRAM, 0.
16μm, 70ns speed
Speed
85 = 85ns (to be characterized)
10 = 100ns
12 = 120ns
Package
ZA = LFBGA66: 0.8mm pitch
Temperature Range
6 = –40 to 85°C
Option
T = Tape & Reel packing
相關(guān)PDF資料
PDF描述
M36DR432DA10ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432CZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432BD85ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432B120ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36DR432DZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432-ZAT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR864CB85ZA6 功能描述:閃存 64M (4Mx16) 85ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR864CB85ZA6T 功能描述:閃存 64M (4Mx16) 85ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36JGK90X 制造商:Panasonic Industrial Company 功能描述:CRT
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