參數(shù)資料
型號(hào): M36W216
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
中文描述: 16兆1兆x16插槽,開(kāi)機(jī)區(qū)塊快閃記憶體和2兆位128KB的x16的SRAM,多個(gè)存儲(chǔ)產(chǎn)品
文件頁(yè)數(shù): 9/62頁(yè)
文件大?。?/td> 434K
代理商: M36W216
9/62
M36W216TI, M36W216BI
V
SSF
and V
SSS
Ground.
V
SSF
and V
SSS
are the
ground reference for all voltage measurements in
the Flash and SRAM chips, respectively.
Note: Each device in a system should have V
D-
DF
, V
DDQF
and V
PPF
decoupled with a 0.1μF ca-
pacitor close to the pin. See Figure 9, AC
Measurement Load Circuit. The PCB trace
widths should be sufficient to carry the re-
quired V
PPF
program and erase currents.
FUNCTIONAL DESCRIPTION
The Flash and SRAM components have separate
power supplies and grounds and are distinguished
by three chip enable inputs:
E
F
for the Flash mem-
ory and E1
S
and E2
S
for the SRAM.
Recommended operating conditions do not allow
both the Flash and the SRAM to be in active mode
at the same time. The most common example is
simultaneous read operations on the Flash and
the SRAM which would result in a data bus con-
tention. Therefore it is recommended to put the
SRAM in the high impedance state when reading
the Flash and vice versa (see Table 2 Main Oper-
ation Modes for details).
Figure 4. Functional Block Diagram
AI07904
Flash Memory
16 Mbit (x16)
V
SSF
E
F
G
F
W
F
RP
F
WP
F
E1
S
E2
S
G
S
W
S
UB
S
LB
S
DQ0-DQ15
V
DDF
V
PPF
A17-A19
A0-A16
SRAM
2 Mbit (x16)
V
SSS
V
DDS
V
DDQF
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M36W216BIZA 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
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