參數(shù)資料
型號: M36W216
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
中文描述: 16兆1兆x16插槽,開機(jī)區(qū)塊快閃記憶體和2兆位128KB的x16的SRAM,多個存儲產(chǎn)品
文件頁數(shù): 49/62頁
文件大?。?/td> 434K
代理商: M36W216
49/62
M36W216TI, M36W216BI
Table 30. Device Geometry Definition
Offset Word
Mode
Data
Description
Value
27h
0015h
Device Size = 2
n
in number of bytes
2 MByte
28h
29h
0001h
0000h
Flash Device Interface Code description
x16
Async.
2Ah
2Bh
0002h
0000h
Maximum number of bytes in multi-byte program or page = 2
n
4
2Ch
0002h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
2
M
2Dh
2Eh
001Eh
0000h
Region 1 Information
Number of identical-size erase block = 001Eh+1
31
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64 KByte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase block = 0007h+1
8
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 KByte
M
2Dh
2Eh
0007h
0000h
Region 1 Information
Number of identical-size erase block = 0007h+1
8
2Fh
30h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8 KByte
31h
32h
001Eh
0000h
Region 2 Information
Number of identical-size erase block = 001Eh+1
31
33h
34h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64 KByte
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