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參數(shù)資料
| 型號： | M36W216 |
| 廠商： | 意法半導體 |
| 英文描述： | 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 16兆1兆x16插槽，開機區(qū)塊快閃記憶體和2兆位128KB的x16的SRAM，多個存儲產(chǎn)品 |
| 文件頁數(shù)： | 12/62頁 |
| 文件大?。?/td> | 434K |
| 代理商： | M36W216 |
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M36W216TI, M36W216BI
12/62
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 4,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 4. Operating and AC Measurement Conditions
Figure 5. AC Measurement I/O Waveform
Note: V
DDQ
means V
DDQF
= V
DDS
Figure 6. AC Measurement Load Circuit
Table 5. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
SRAM
Flash Memory
Units
70
70/85
Min
Max
Min
Max
V
DDF
Supply Voltage
–
–
2.7
3.3
V
V
DDQF
Supply Voltage
–
–
2.7
3.3
V
V
DDS
Supply Voltage
2.7
3.3
–
–
V
Ambient Operating Temperature
– 40
85
– 40
85
°C
Load Capacitance (C
L
)
30
50
pF
Input Rise and Fall Times
1V/ns
5ns
Input Pulse Voltages
0 to V
DDQF
0 to V
DDQF
V
Input and Output Timing Ref. Voltages
V
DDQF
/2
V
DDQF
/2
V
AI90258
VDDQ
0V
VDDQ/2
AI90259
VDDQF
CL
CL includes JIG capacitance
25k
DEVICE
UNDER
TEST
0.1μF
VDDF
0.1μF
VDDQF
25k
Symbol
Parameter
Test Condition
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V, f=1 MHz
12
pF
C
OUT
Output Capacitance
V
OUT
= 0V, f=1 MHz
15
pF
相關PDF資料 |
PDF描述 |
|---|---|
| M36W216BI70ZA1T | 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216BIZA | PV76L14-18P |
| M36W216TI | 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216BI | 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216TI-ZAT | 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M36W216BI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216BI70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216BI85ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216BIZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
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