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參數(shù)資料
| 型號： | M36W216 |
| 廠商： | 意法半導體 |
| 英文描述： | 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 16兆1兆x16插槽，開機區(qū)塊快閃記憶體和2兆位128KB的x16的SRAM，多個存儲產(chǎn)品 |
| 文件頁數(shù)： | 13/62頁 |
| 文件大?。?/td> | 434K |
| 代理商： | M36W216 |
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M36W216TI, M36W216BI
Table 6. DC Characteristics
Symbol
Parameter
Device
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
Flash & SRAM
0V
≤
V
IN
≤
V
DDQF
±1
μA
I
LO
Output Leakage Current
Flash
0V
≤
V
OUT
≤
V
DDQF
±10
μA
SRAM
0V
≤
V
OUT
≤
V
DDQF,
SRAM Outputs Hi-Z
±1
μA
I
DDS
V
DD
Standby Current
Flash
E
F
= V
DDQF
± 0.2V
RP
F
= V
DDQ
± 0.2V
15
50
μA
SRAM
E1
S
≥
V
DDS
– 0.2V
V
IN
≥
V
DDS
0.2V or V
IN
≤
0.2V
5
15
μA
I
DDD
Supply Current (Reset)
Flash
RP
F
= V
SSF
± 0.2V
15
50
μA
I
DD
Supply Current
SRAM
V
DDS
= 3.3V
,
I
OUT
= 0 mA, f = 1MHz
1.5
3
mA
V
DDS
= 3.3V
,
I
OUT
= 0 mA, f = f
MAX
= 1/t
AVAV
7
15
mA
I
DDR
Supply Current (Read)
Flash
E
F
= V
IL
, G
F
= V
IH,
f = 5 MHz
10
20
mA
I
DDW
Supply Current
(Program)
Flash
Program in progress
V
PPF
= 12V ± 5%
10
20
mA
Program in progress
V
PPF
= V
DDF
10
20
mA
I
DDE
Supply Current (Erase)
Flash
Erase in progress
V
PPF
= 12V ± 5%
5
20
mA
Erase in progress
V
PPF
= V
DDF
5
20
mA
I
DDES
Supply Current
(Program/Erase
Suspend)
Flash
E
F
= V
DDQF
± 0.2V,
Erase suspended
50
μA
I
PP1
Program Current
(Read or Standby)
Flash
V
PPF
>
V
DDF
400
μA
I
PP2
Program Current
(Read or Standby)
Flash
V
PPF
≤
V
DDF
5
μA
I
PPR
Program Current (Reset)
Flash
RP
F
= V
SSF
± 0.2V
5
μA
I
PPW
Program Current
(Program)
Flash
V
PPF
= 12V ± 0.5V
Program in progress
10
mA
V
PPF
= V
DDF
Program in progress
5
mA
I
PPE
Program Current (Erase)
Flash
V
PPF
= 12V ± 0.5V
Erase in progress
10
mA
V
PPF
= V
DDF
Erase in progress
5
μA
V
IL
Input Low Voltage
Flash & SRAM
V
DDQF
= V
DDS
≥
2.7V
–0.3
0.6
V
V
IH
Input High Voltage
Flash & SRAM
V
DDQF
= V
DDS
≥
2.7V
0.7V
DDQF
V
DDQF
+0.3
V
相關PDF資料 |
PDF描述 |
|---|---|
| M36W216BI70ZA1T | 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216BIZA | PV76L14-18P |
| M36W216TI | 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216BI | 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216TI-ZAT | 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M36W216BI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216BI70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216BI85ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216BIZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
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