參數(shù)資料
型號(hào): M36W216
廠(chǎng)商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
中文描述: 16兆1兆x16插槽,開(kāi)機(jī)區(qū)塊快閃記憶體和2兆位128KB的x16的SRAM,多個(gè)存儲(chǔ)產(chǎn)品
文件頁(yè)數(shù): 42/62頁(yè)
文件大?。?/td> 434K
代理商: M36W216
M36W216TI, M36W216BI
42/62
Figure 21. SRAM Write AC Waveforms, E1
S
Controlled
Note: 1. W
S
, E1
S
, E2
S
, UB
S
and/or LB
S
must be asserted to initiate a write cycle. Output Enable (G
S
) = Low (otherwise, DQ0-DQ15 are high
impedance). If E1
S
, E2
S
and W
S
are deasserted at the same time, DQ0-DQ15 remain high impedance.
2. If E1
S
, E2
S
and W
S
are deasserted at the same time, DQ0-DQ15 remain high impedance.
3. The I/O pins are in output mode and input signals must not be applied.
AI07915
tAVAV
tE1HAX
tDVE1H
tDVE2L
INPUT VALID
A0-A16
E1
S
W
S
DQ0-DQ15
VALID
E2
S
tAVE1H
tAVE2L
tBLE1H
tBLE2L
tGHQZ
tE1HDZ
tE2LDZ
tAVE1L
UB
S
, LB
S
tE2HE2L
tE1LE1H
G
S
tWLE1H
tWLE2L
tAVE2H
tE2LAX
Note 3
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