參數(shù)資料
型號: M36W216
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
中文描述: 16兆1兆x16插槽,開機(jī)區(qū)塊快閃記憶體和2兆位128KB的x16的SRAM,多個存儲產(chǎn)品
文件頁數(shù): 35/62頁
文件大小: 434K
代理商: M36W216
35/62
M36W216TI, M36W216BI
Table 20. Flash Write AC Characteristics, Chip Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. Applicable if V
PPF
is seen as a logic input (V
PPF
< 3.6V).
Symbol
Alt
Parameter
Flash
Unit
70
85
t
AVAV
t
WC
Write Cycle Time
Min
70
85
ns
t
AVEH
t
AS
Address Valid to Chip Enable High
Min
45
45
ns
t
DVEH
t
DS
Data Valid to Chip Enable High
Min
45
45
ns
t
EHAX
t
AH
Chip Enable High to Address Transition
Min
0
0
ns
t
EHDX
t
DH
Chip Enable High to Data Transition
Min
0
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
Min
25
25
ns
t
EHGL
Chip Enable High to Output Enable Low
Min
25
25
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
Min
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
Min
45
45
ns
t
ELQV
Chip Enable Low to Output Valid
Min
70
85
ns
t
QVVPL(1,2)
Output Valid to V
PPF
Low
Min
0
0
ns
t
QVWPL
Data Valid to Write Protect Low
Min
0
0
ns
t
VPHEH(1)
t
VPS
V
PPF
High to Chip Enable High
Min
200
200
ns
t
WLEL
t
CS
Write Enable Low to Chip Enable Low
Min
0
0
ns
t
WPHEH
Write Protect High to Chip Enable High
Min
45
45
ns
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