參數(shù)資料
型號(hào): M36W216
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
中文描述: 16兆1兆x16插槽,開機(jī)區(qū)塊快閃記憶體和2兆位128KB的x16的SRAM,多個(gè)存儲(chǔ)產(chǎn)品
文件頁數(shù): 44/62頁
文件大?。?/td> 434K
代理商: M36W216
M36W216TI, M36W216BI
44/62
Table 23. SRAM Write AC Characteristics
Symbol
Alt
Parameter
SRAM
Unit
Min
Max
t
AVAV
t
WC
Write Cycle Time
70
ns
t
AVE1L
,
t
AVE2H
,
t
AVWL
t
AS
Address Valid to Beginning of Write
0
ns
t
AVWH
t
AW
Address Valid to Write Enable High
60
ns
t
BLWH
t
BLE1H
t
BLE2L
t
AVBH
t
BW
UB
S
, LB
S
Valid to End of Write
60
ns
t
DVE1H
,
t
DVE2L
,
t
DVWH
t
DVBH
t
DW
Input Valid to End of Write
30
ns
t
E1HAX
,
t
E2LAX
,
t
WHAX
t
WR
End of Write to Address Change
0
ns
t
E1HDZ
,
t
E2LDZ
,
t
WHDZ
t
BHDZ
t
HD
Address Transition to End of Write
0
ns
t
E1LEIH
,
t
E1LWH
t
CW1
Chip Enable 1 Low to End of Write
60
ns
t
E2HE2L
t
E2HWH
t
CW2
Chip Enable 2 High to End of Write
60
ns
t
WHQX
t
DH
Write Enable High to Input Transition
10
ns
t
WLQZ
t
WHZ
Write Enable Low to Output Hi-Z
25
ns
t
WLWH
t
WLE1H
t
WLE2L
t
WP
Write Enable Pulse Width
45
ns
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