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參數(shù)資料
| 型號(hào)： | M5M5Y5636TG-25 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
| 中文描述： | 18874368位（524288 - Word的36位）網(wǎng)絡(luò)的SRAM |
| 文件頁數(shù)： | 14/27頁 |
| 文件大?。?/td> | 212K |
| 代理商： | M5M5Y5636TG-25 |
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MITSUBISHI LSIs
M5M5Y5636TG – 25,22,20
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
14
MITSUBISHI
ELECTRIC
Advanced Information
M5M5Y5636TG REV.0.0
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
V
DDQ
V
I
V
O
PD
T
OPR
T
STG(bias)
T
STG
Note24. * This is -1.0V~3.6V when pulse width
≤
2ns, and -0.5V~2.5V in case of DC.
** This is -1.0V~V
DDQ
+1.0V(
≤
3.6V max.) when pulse width
≤
2ns, and –0.5V~V
DDQ
+0.5V in case of DC.
Parameter
Conditions
Ratings
-0.5*~2.5
-0.5*~2.5
Unit
V
V
V
V
mW
°C
°C
°C
Power Supply Voltage
I/O Buffer Power Supply Voltage
Input Voltage
Output Voltage
Maximum Power Dissipation (V
DD
)
Operating Temperature
Storage Temperature(bias)
Storage Temperature
-0.5~V
DDQ
+0.5(
≤
2.5V max.) **
-0.5~V
DDQ
+0.5(
≤
2.5V max.) **
780
0~70
-10~85
-65~150
With respect to V
SS
DC ELECTRICAL CHARACTERISTICS
(1) Power Supplies
Limits
Symbol
Parameter
Condition
Min
1.70
1.70
Max
1.95
1.95
Unit
V
DD
V
DDQ
Power Supply Voltage
I/O Buffer Power Supply Voltage
V
V
(2) CMOS I/O DC Input Characteristics
Limits
Symbol
Parameter
Condition
Min
Max
Unit
V
IH
V
IL
Note25. *V
IL
min is –1.0V and V
IH
max is V
DDQ
+1.0V(max. 3.6V) in case of AC (Pulse width
≤
2ns).
High-level Input Voltage
Low-level Input Voltage
0.65*V
DDQ
-0.3*
V
DDQ
+0.3
0.35*V
DDQ
V
V
(3) Input and Output Leakage Characteristics
Limits
Symbol
Parameter
Condition
Min
Max
Unit
Input Leakage Current
(except EP2, EP3, LBO#, ZQ, MCH, MCL pins)
V
I
= 0V~V
DDQ
10
μA
I
IL
Input Leakage Current of
EP2, EP3, LBO#, ZQ, MCH, MCL pins
V
I
= 0V~V
DDQ
10
μA
I
OL
Output Leakage Current
V
I/O
= 0V~V
DDQ
10
μA
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