參數(shù)資料
型號： MBM29F017-12
廠商： Fujitsu Limited
英文描述： 16M (2M ×8) Bit Flash Memory( 單5V 電源電壓2M ×8閃速存儲器)
中文描述： 1,600（2米× 8）位快閃記憶體（單5V的電源電壓200萬× 8閃速存儲器）
文件頁數(shù)： 16/48頁
文件大?。?/td> 548K
代理商： MBM29F017-12
16
MBM29F017
-90/-12
mand during the Sector Erase time-out results in immediate termination of the time-out period and suspension
of the erase operation.
Any other command written during the Erase Suspend mode will be ignored except the Erase Resume command.
Writing the Erase Resume command resumes the erase operation. The addresses are “don't-cares” when writing
the Erase Suspend or Erase Resume command.
When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum
of 15 ms to suspend the erase operation. When the device has entered the erase-suspended mode, the RY/BY
output pin and the DQ
7
bit will be at logic “1”, and DQ
6
will stop toggling. The user must use the address of the
erasing sector for reading DQ
6
and DQ
7
to determine if the erase operation has been suspended. Further writes
of the Erase Suspend command are ignored.
When the erase operation has been suspended, the device defaults to the erase-suspend-read mode. Reading
data in this mode is the same as reading from the standard read mode except that the data must be read from
sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the
device is in the erase-suspend-read mode will cause DQ
2
to toggle. (See the section on DQ
2
.)
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate com-
mand sequence for Byte Program. This program mode is known as the erase-suspend-program mode. Again,
programming in this mode is the same as programming in the regular Byte Program mode except that the data
must be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended
sector while the device is in the erase-suspend-program mode will cause DQ
2
to toggle. The end of the erase-
suspended program operation is detected by the RY/BY output pin, Data polling of DQ
7
, or by the Toggle Bit I
(DQ
6
) which is the same as the regular Byte Program operation. Note that DQ
7
must be read from the byte
program address while DQ
6
can be read from any address.
To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of
the Resume command at this point will be ignored. Another Erase Suspend command can be written after the
chip has resumed erasing.
Write Operation Status
Notes: 1.Performing successive read operations from the erase-suspended sector will cause DQ
2
to toggle.
2.Performing successive read operations from any address will cause DQ
6
to toggle.
3.Reading the byte address being programmed while in the erase-suspend program mode will indicate logic
“1” at the DQ
2
bit. However, successive reads from the erase-suspended sector will cause DQ
2
to toggle.
Table 7 Hardware Sequence Flags
Status
DQ
7
DQ
7
0
DQ
6
Toggle
Toggle
DQ
5
0
0
DQ
3
0
1
DQ
2
1
Toggle
Toggle
(Note 1)
In progress
Embedded Program
TM
Algorithm
Embedded Erase
TM
Algorithm
Erase Suspend Read
(Erase Suspended Sector)
Erase Suspend Read
(Non-Erase Suspended Sector)
Erase Suspend Program
(Non-Erase Suspended Sector)
Embedded Program
TM
Algorithm
Embedded Erase
TM
Algorithm
Erase
Suspended
Mode
Erase
Suspended
Mode
1
1
0
0
Data
Data
Data
Data
Data
DQ
7
Toggle
(Note 2)
Toggle
Toggle
0
0
1
(Note 3)
1
N/A
Exceeded
Time Limits
DQ
7
0
1
1
0
1
Erase Suspend Program
(Non-Erase Suspended Sector)
DQ
7
Toggle
1
0
N/A
相關(guān)PDF資料
PDF描述
MBM29F017-90 16M (2M ×8) Bit Flash Memory( 單5V 電源電壓2M ×8閃速存儲器)
MBM29F017A 2.2A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85
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MBM29F017A-70PFTR 16M (2M X 8) BIT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F017A 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT
MBM29F017A-12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT
MBM29F017A-12PFTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT
MBM29F017A-12PFTR 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT
MBM29F017A-12PNS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT
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