參數(shù)資料
型號: MBM29F017-12
廠商: Fujitsu Limited
英文描述: 16M (2M ×8) Bit Flash Memory( 單5V 電源電壓2M ×8閃速存儲器)
中文描述: 1,600(2米× 8)位快閃記憶體(單5V的電源電壓200萬× 8閃速存儲器)
文件頁數(shù): 44/48頁
文件大?。?/td> 548K
代理商: MBM29F017-12
44
MBM29F017
-90/-12
I
ERASE AND PROGRAMMING PERFORMANCE
I
TSOP PIN CAPACITANCE
Note: Test conditions T
A
= 25
°
C, f = 1.0 MHz
I
SON PIN CAPACITANCE
Note: Test conditions T
A
= 25
°
C, f = 1.0 MHz
Parameter
Limits
Unit
Comments
Min.
Typ.
Max.
Sector Erase Time
1
15
sec
Excludes 00H programming
prior to erasure
Byte Programming Time
8
500
μ
s
Excludes system-level
overhead
Chip Programming Time
16.8
100
sec
Excludes system-level
overhead
Erase/Program Cycle
100,000
Cycles
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN1
Input Capacitance
V
IN
= 0
8
10
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
10
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
9
10
pF
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN1
Input Capacitance
V
IN
= 0
T.B.D
T.B.D
pF
C
OUT
Output Capacitance
V
OUT
= 0
T.B.D
T.B.D
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
T.B.D
T.B.D
pF
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