參數(shù)資料
型號(hào): MBM29F017-12
廠商: Fujitsu Limited
英文描述: 16M (2M ×8) Bit Flash Memory( 單5V 電源電壓2M ×8閃速存儲(chǔ)器)
中文描述: 1,600(2米× 8)位快閃記憶體(單5V的電源電壓200萬× 8閃速存儲(chǔ)器)
文件頁數(shù): 30/48頁
文件大?。?/td> 548K
代理商: MBM29F017-12
30
MBM29F017
-90/-12
Figure 7 Alternate CE Controlled Program Operation Timings
Notes: 1.PA is address of the memory location to be programmed.
2.PD is data to be programmed at byte address.
3.DQ
7
is the output of the complement of the data written to the device.
4.D
OUT
is the output of the data written to the device.
5.Figure indicates last two bus cycles of four bus cycle sequence.
t
CP
t
DS
t
WHWH1
t
WC
t
AH
5.0 V
WE
OE
Addresses
Data
t
AS
t
CPH
t
WS
t
DH
DQ
7
PD
A0H
D
OUT
CE
×××
H
PA
PA
Data Polling
3rd Bus Cycle
t
GHEL
t
WH
相關(guān)PDF資料
PDF描述
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