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參數(shù)資料
| 型號： | MBM29F040A-90 |
| 廠商： | Fujitsu Limited |
| 英文描述： | 4M (512K ×8) BIT Flash Memoery(512K ×8位 5V 電源電壓閃速存儲器) |
| 中文描述： | 4分（為512k × 8）位閃存Memoery（為512k × 8位5V的電源電壓閃速存儲器） |
| 文件頁數(shù)： | 14/42頁 |
| 文件大?。?/td> | 492K |
| 代理商： | MBM29F040A-90 |
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14
MBM29F040A
-70/-90/-12
chip Erase or Programming operation. The Erase Suspend command (B0H) will be allowed only during the
Sector Erase Operation that will include the sector erase time-out period after the Sector Erase commands
(30H). Writing this command during the time-out will result in immediate termination of the time-out period. Any
subsequent writes of the Sector Erase command will be taken as the Erase Resume command. Note that any
other commands during the time out will reset the device to read mode. The addresses are DON'T-CARES in
writing the Erase Suspend or Erase Resume commands.
When the Erase Suspend command is written during a Sector Erase operation, the chip will take between 0.1
μ
s to 15
μ
s to suspend the erase operation and go into erase suspended read mode (pseudo-read mode), during
which the user can read from a sector that is NOT being erased. A read from a sector being erased may result
in invalid data. The user must monitor the toggle bit to determine if the chip has entered the pseudo-read mode,
at which time the toggle bit stops toggling. An address of a sector NOT being erased must be used to read the
toggle bit, otherwise the user may encounter intermittent problems. Note that the user must keep track of what
state the chip is in since there is no external indication of whether the chip is in pseudo-read mode or actual
read mode. After the user writes the Erase Suspend command and waits until the toggle bit stops toggling, data
reads from the device may then be performed. Any further writes of the Erase Suspend command at this time
will be ignored.
Every time an Erase Suspend command followed by an Erase Resume command is written, the internal (pulse)
counters are reset. These counters are used to count the number of high voltage pulses the memory cell requires
to program or erase. If the count exceeds a certain limit, then the DQ
5
bit will be set (Exceeded Time Limit flag).
This resetting of the counters is necessary since the Erase Suspend command can potentially interrupt or disrupt
the high voltage pulses.
To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of
the Resume command at this point will be ignored. Another Erase Suspend command can be written after the
chip has resumed.
Write Operation Status
Note: DQ
0
, DQ
1
and DQ
2
are reserve pins for future use. DQ
4
is for Fujitsu internal use only.
DQ
7
Data Polling
The MBM29F040A device features Data Polling as a method to indicate to the host that the Embedded Algorithms
are in progress or completed. During the Embedded Program Algorithm an attempt to read the device will
produce the compliment of the data last written to DQ
7
. Upon completion of the Embedded Program Algorithm,
Table 6 Hardware Sequence Flags
Status
DQ
7
DQ
6
DQ
5
DQ
3
In progress
Auto-programming
DQ
7
Toggle
0
0
Program/Erase in Auto Erase
0
Toggle
0
1
Erase
Suspended
Mode
Erase Suspend Read
(Erase Suspended Sector)
1
1
0
0
Erase Suspend Read
(Non-Erase Suspended Sector)
Data
Data
Data
Data
Exceeded
Time Limits
Auto-Programming
DQ
7
Toggle
1
0
Program/Erase in Auto-Erase
0
Toggle
1
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F040A | 4M (512K ×8) Bit Flash Memory( 單5V 電源電壓512K ×8位閃速存儲器) |
| MBM29F040C | 4M (512K X 8) BIT |
| MBM29F040C-55 | Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85 |
| MBM29F040C-55PD | 4M (512K X 8) BIT |
| MBM29F040C-55PFTN | Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F040A-90-X | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT |
| MBM29F040C | 制造商:FUJRTSU 功能描述: |
| MBM29F040C-55 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT |
| MBM29F040C-55PD | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT |
| MBM29F040C-55PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY 4M (512K x 8) BIT |
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