參數(shù)資料
型號: MBM29F040A-90
廠商: Fujitsu Limited
英文描述: 4M (512K ×8) BIT Flash Memoery(512K ×8位 5V 電源電壓閃速存儲器)
中文描述: 4分(為512k × 8)位閃存Memoery(為512k × 8位5V的電源電壓閃速存儲器)
文件頁數(shù): 40/42頁
文件大?。?/td> 492K
代理商: MBM29F040A-90
40
MBM29F040A
-70/-90/-12
+0.10
–0.05
+.004
0.25(.010)
0.15(.006)
0.15(.006)
MAX
0.35(.014)
MAX
Details of "A" part
1.10
(MOUNTING HEIGHT)
.043
(STAND OFF)
0.05(.002)MIN
(.315±.008)
8.00±0.20
TYP
0.50(.0197)
0.10(.004)
M
REF.
7.50(.295)
(.008±.004)
0.20±0.10
(.006±.002)
0.15±0.05
(.020±.004)
0.50±0.10
0.10(.004)
(.748±.008)
19.00±0.20
(.724±.008)
18.40±0.20
(.787±.008)
20.00±0.20
LEAD No.
"A"
INDEX
17
16
32
1
1994 FUJITSU LIMITED F32035S-2C-1
C
Dimensions in mm(inches)
* Resin Protrusion:(Each Side:0.15(.006)MAX
(Suffix: PFTN - Assembly: Malaysia)
Plastic TSOP, 32 Pin
(FPT-32P-M24)
相關PDF資料
PDF描述
MBM29F040A 4M (512K ×8) Bit Flash Memory( 單5V 電源電壓512K ×8位閃速存儲器)
MBM29F040C 4M (512K X 8) BIT
MBM29F040C-55 Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85
MBM29F040C-55PD 4M (512K X 8) BIT
MBM29F040C-55PFTN Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
相關代理商/技術參數(shù)
參數(shù)描述
MBM29F040A-90-X 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040C 制造商:FUJRTSU 功能描述:
MBM29F040C-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-55PD 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-55PFTN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY 4M (512K x 8) BIT