參數(shù)資料
型號(hào)： MBM29F040A-90
廠商： Fujitsu Limited
英文描述： 4M (512K ×8) BIT Flash Memoery(512K ×8位 5V 電源電壓閃速存儲(chǔ)器)
中文描述： 4分（為512k × 8）位閃存Memoery（為512k × 8位5V的電源電壓閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 16/42頁(yè)
文件大小： 492K
代理商： MBM29F040A-90
16
MBM29F040A
-70/-90/-12
execute program or erase command sequence. This allows the system to continue to use the other active
sectors in the device.
If this failure condition occurs during the chip erase operation, it specifies that the entire chip is bad or combination
of sectors are bad.
If this failure condition occurs during the byte programming operation, it specifies that the entire sector containing
that byte is bad and this sector may not be reused, (other sectors are still functional and can be reused).
The DQ
5
failure condition may also appear if a user tries to program a non blank location without erasing. In
this case the device locks out and never completes the Embedded Algorithm operation. Hence, the system
never reads a valid data on DQ
7
bit and DQ
6
never stops toggling. Once the device has exceeded timing limits,
the DQ
5
bit will indicate a “1.” Please note that this is not a device failure condition since the device was incorrectly
used.
DQ
3
Sector Erase Timer
After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ
3
will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase
command sequence.
If Data Polling or the Toggle Bit indicates the device has been written with a valid erase command. DQ
3
may
be used to determine if the sector erase timer window is still open. If DQ
3
is high (“1”) the internally controlled
erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or Toggle Bit. If DQ
3
is low (“0”), the device will accept
additional sector erase commands. To insure the command has been accepted, the system software should
check the status of DQ
3
prior to and following each subsequent sector erase command. If DQ
3
were high on
the second status check, the command may not have been accepted.
Refer to Table 6: Hardware Sequence Flags.
Data Protection
The MBM29F040A is designed to offer protection against accidental erasure or programming caused by spurious
system level signals that may exist during power transitions. During power up the device automatically resets
the internal state machine in the Read mode. Also, with its control register architecture, alteration of the memory
contents only occurs after successful completion of specific multi-bus cycle command sequences.
The device also incorporates several features to prevent inadvertent write cycles resulting form V
CC
power-up
and power-down transitions or system noise.
Low V
CC
Write Inhibit
To avoid initiation of a write cycle during V
CC
power-up and power-down, a write cycle is locked out for V
CC
less
than 3.2 V (typically 3.7 V). If V
CC
< V
LKO
, the command register is disabled and all internal program/erase circuits
are disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored
until the V
CC
level is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE = V
IL
, CE = V
IH
, or WE = V
IH
. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.
相關(guān)PDF資料
PDF描述
MBM29F040A 4M (512K ×8) Bit Flash Memory( 單5V 電源電壓512K ×8位閃速存儲(chǔ)器)
MBM29F040C 4M (512K X 8) BIT
MBM29F040C-55 Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85
MBM29F040C-55PD 4M (512K X 8) BIT
MBM29F040C-55PFTN Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F040A-90-X 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040C 制造商:FUJRTSU 功能描述:
MBM29F040C-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-55PD 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-55PFTN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY 4M (512K x 8) BIT
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