參數(shù)資料
型號： MBM29F040A-90
廠商： Fujitsu Limited
英文描述： 4M (512K ×8) BIT Flash Memoery(512K ×8位 5V 電源電壓閃速存儲(chǔ)器)
中文描述： 4分（為512k × 8）位閃存Memoery（為512k × 8位5V的電源電壓閃速存儲(chǔ)器）
文件頁數(shù)： 9/42頁
文件大?。?/td> 492K
代理商： MBM29F040A-90
9
MBM29F040A
-70/-90/-12
Read Mode
The MBM29F040A has two control functions which must be satisfied in order to obtain data at the outputs. CE
is the power control and should be used for a device selection. OE is the output control and should be used to
gate data to the output pins if a device is selected.
Address access time (t
ACC
) is equal to the delay from stable addresses to valid output data. The chip enable
access time (t
CE
) is the delay from stable addresses and stable CE to valid data at the output pins. The output
enable access time is the delay from the falling edge of OE to valid data at the output pins (assuming the
addresses have been stable for at least t
ACC
-t
OE
time).
Standby Mode
The MBM29F040A has two standby modes, a CMOS standby mode (CE input held at V
CC
±
0.3 V.), when the
current consumed is less than 100
μ
A; and a TTL standby mode (CE is held at V
IH
) when the current required
is reduced to approximately 1 mA. In the standby mode the outputs are in a high impedance state, independent
of the OE input.
If the device is deselected during erasure or programming, the device will draw active current until the operation
is completed.
Output Disable
With the OE input at a logic high level (V
IH
), output from the device is disabled. This will cause the output pins
to be in a high impedance state.
Autoselect
The autoselect mode allows the reading out of a binary code from the device and will identify its manufacturer
and type. This mode is intended for use by programming equipment for the purpose of automatically matching
the device to be programmed with its corresponding programming algorithm. This mode is functional over the
entire temperature range of the device.
To activate this mode, the programming equipment must force V
ID
(11.5 V to 12.5 V) on address pin A
9
. Two
identifier bytes may then be sequenced from the device outputs by toggling address A
0
from V
IL
to V
IH
. All
addresses are DON'T CARES except A
0
, A
1
, and A
6
.
The manufacturer and device codes may also be read via the command register, for instances when the
MBM29F040A is erased or programmed in a system without access to high voltage on the A
9
pin. The command
sequence is illustrated in Table 5. (Refer to Autoselect Command section.)
* :Outputs 01H at protected sector addresses and 00H at unprotected sector addresses.
Table 3 MBM29F040A Sector Protection Verify Autoselect Codes
Type
A
18
A
17
A
16
A
6
A
1
A
0
Code
7
DQ
6
DQ
5
DQ
4
DQ
3
DQ
2
DQ
1
DQ
0
Manufacture’s
Code
X
X
X
V
IL
V
IL
V
IL
04H
0
0
0
0
0
1
0
0
Device Code
X
X
X
V
IL
V
IL
V
IH
04H
1
0
1
0
0
1
0
0
Sector
Protection
Sector
Addresses
V
IL
V
IH
V
IL
01H*
0
0
0
0
0
0
0
1
相關(guān)PDF資料
PDF描述
MBM29F040A 4M (512K ×8) Bit Flash Memory( 單5V 電源電壓512K ×8位閃速存儲(chǔ)器)
MBM29F040C 4M (512K X 8) BIT
MBM29F040C-55 Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85
MBM29F040C-55PD 4M (512K X 8) BIT
MBM29F040C-55PFTN Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F040A-90-X 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040C 制造商:FUJRTSU 功能描述:
MBM29F040C-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-55PD 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-55PFTN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY 4M (512K x 8) BIT
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